Control of Orientation of Pb(Zr, Ti)O₃ Thin Films Using PbTiO₃ Buffer Layer

Abstract

In order to develop an intelligent flow sensor which can be validated by itself, a wavelet-transform-based new method for assessing blockage of the sensing line in a differential-pressure flow sensor is proposed in this paper. The wavelet transform, a powerful means of signal processing for analysing the characteristic of a signal if there is little prior knowledge about it, is used to decompose the sensor-output signal into some elementary building blocks. The energy distributions in these building blocks reveal the effects of blockage of the sensing line of the sensor and then are exploited to determine their existence. Experimental results show that the incipience of the sensing-line blockage can be detected by this method.

Effect of textured Pb(Zr1−xTix)O3 seed layer on fatigue properties of ferroelectric Pb0.99[(Zr0.6Sn0.4)0.85Ti0.15]0.98Nb0.02O3 thin films

“…Enhancement of the PZT ͑100͒ texture due to excess Pb and/or PbO buffer layer has been widely reported. 5,7,12 Consequently, the XRD patterns of Figs. 1 and 2 indicate that the orientation of PZSTN film can be controlled by inserting the PZT seed layer with different Zr/Ti ratios.…”

“…Some researchers studied the preferred orientation of PZT film in terms of control of the heating schedule, 5 buffer layer insertion, 6 and addition of excess Pb. 7 They have also tried to explain the electrical behavior of PZT thin films by texturing, ͑111͒ and ͑100͒. However there are few reports regarding the behavior of preferred orientation on the electrical properties of a Pb complex composition, Pb 0.99 ͓(Zr 0.6 Sn 0.4 ) 1Ϫx Ti x ͔ 0.98 Nb 0.02 O 3 ͑PZSTN͒ thin film, which has been reported to be a valuable candidate for FRAM application because of its superior fatigue behavior.…”

Preparation and characteristics of PLZT (8/65/35) thin films by sol-gel method

“…Before the spin-coating process, a PbTiO 3 (PT) layer was deposited as a seed layer in order to provide a nucleation site for perovskite phase [6] . Chemicals used in PT precursor were titanium isopropoxide, lead acetate trihydrate and acetylacetone.…”

Graphical peak analysis method for determining densities and emission rates of traps in dielectric film from transient discharge current

“…Details of the film preparation procedures were reported. 29,30 DCTS measurements were performed at 373 K in an oxidation atmosphere ͑Ar:O 2 ϭ1:1 at 1 atom͒. The transient discharge current was measured at V dis ϭ0 V using a Keithley 236 source-measure unit, after V cha of 2 V was applied to the capacitor in the interval of 600 s. Figure 9 shows the transient discharge current in the Pt/PZT/Pt capacitor.…”