Control of phase transition in quasi-one-dimensional atomic wires by electron doping

Shim, Hyungjoon; Yu, Suzhu; Lee, Woosang; Koo, Ja−Yong; Lee, Geunseop

doi:10.1063/1.3143719

Cited by 27 publications

(38 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We also observed the decrease in T c by the introduction of Na impurities and attributed it to the similar but opposite doping effect ͑electron doping͒. 43 This scenario needs to be checked by investigating the electronic structures using ARUPS.…”

Section: Discussionmentioning

confidence: 83%

Roles of defects induced by hydrogen and oxygen on the structural phase transition ofSi(111)4×1-In

Lee

Shim

et al. 2009

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

The influences of surface defects created by hydrogen and oxygen adsorption on the ͑4 ϫ 1͒ → ͑8 ϫ 2͒ structural phase transition in an In/Si͑111͒ system have been studied using low-energy electron diffraction. The transition temperature ͑T c ͒ decreased with the hydrogen exposure as compared to the clean surface, whereas it increased with the oxygen exposure. The H-induced decrease in the T c is expected and explainable by the general destructive role of defects as random disorders in the transition. In contrast, the O-induced increase of the T c is rather unusual. Mobile defects or doping effects may account for the assisting role of the O-induced defects in the condensation of the ͑8 ϫ 2͒ low-temperature phase.

show abstract

Section: Discussionmentioning

confidence: 83%

Roles of defects induced by hydrogen and oxygen on the structural phase transition ofSi(111)4×1-In

Lee

Shim

et al. 2009

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

show abstract

“…Moreover, one may expect that by addition of extra atoms that act as dopants (in analogy to previous experiments in, e.g. the In/Si(111) chains [20]), one may tune the charge content of the chain. This carries the opportunity to exert atomic-scale control over the electronic properties of these nanostructures at the ultimate lower size limit.…”

Section: Resultsmentioning

confidence: 99%

“…Interestingly, the In nanowires are susceptible to doping (e.g. with Na), and the phase transition temperature can be shifted [20], which has been explained within the CDW picture. Recently, surface optical spectroscopy in the infrared range has successfully been performed in situ on the In/Si(111) chains [21], including the phase transition into the low-temperature phase, providing additional input for structural models.…”

mentioning

confidence: 93%

Self-organized atomic nanowires of noble metals on Ge(001): atomic structure and electronic properties

et al. 2009

View full text Add to dashboard Cite

Self-organized atomic nanowires of noble metals on Ge(001): atomic structure and electronic properties Abstract. Atomic structures of quasi-one-dimensional (1D) character can be grown on semiconductor substrates by metal adsorption. Significant progress concerning study of their 1D character has been achieved recently by condensing noble metal atoms on the Ge(001) surface. In particular, Pt and Au yield high quality reconstructions with low defect densities. We report on the self-organized growth and the long-range order achieved, and present data from scanning tunneling microscopy (STM) on the structural components. For Pt/Ge(001), we find hot substrate growth is the preferred method for self-organization. Despite various dimerized bonds, these atomic wires exhibit metallic conduction at room temperature, as documented by low-bias STM. For the recently discovered Au/Ge(001) nanowires, we have developed a deposition technique that allows complete substrate coverage. The Au nanowires are extremely well separated spatially, exhibit a continuous 1D charge density, and are of solid metallic conductance. In this review, we present structural details for both types of nanowires, and discuss similarities and differences. A perspective is given for their potential to host a 1D electron system. The ability to condense different noble metal nanowires demonstrates how atomic control of the structure affects the electronic properties.

show abstract

“…In a recent series of diffraction experiments, the defects created by depositing metal atoms (In and Na) or by exposing the surface to gases (hydrogen and oxygen) were found to change the transition temperature [23][24][25]27]. Of particular interest was the adsorption of oxygen, which increased the T c of the phase transition of the In/Si(111)-4×1 surface, whereas the other defects reduced it.…”

Section: Introductionmentioning

confidence: 96%

“…Global characteristics such as the transition temperature (T c ) and transport property of this In/Si(111)-4×1 surface have been reported to be affected significantly by small amounts of defects [13,[20][21][22][23][24][25][26][27][28]. In a recent series of diffraction experiments, the defects created by depositing metal atoms (In and Na) or by exposing the surface to gases (hydrogen and oxygen) were found to change the transition temperature [23][24][25]27].…”

Section: Introductionmentioning

confidence: 96%

Initial stages of oxygen adsorption onIn/Si(111)-4×1

et al. 2014

Self Cite

View full text Add to dashboard Cite

The In/Si(111)4×1 surface with In wires is a prototypical one-dimensional electron system showing a temperature-induced structural phase transition. While most impurities are known to decrease the transition temperature (T c ), oxygen was reported to increase the T c . In order to understand the exceptional influence of oxygen, we have examined the initial stages of oxygen adsorption on the surface by scanning tunneling microscopy (STM) and density-functional theory (DFT) calculations. Oxygen molecules were found to dissociate and adsorb as atoms on the surface. STM revealed three distinct O adsorption features as well as occasional transformations from one to another. The high-resolution images showed that all three adsorbed O features were located at the center of the In trimer at both edges of the In wire. This registry is in contradiction with the previous theoretical predictions [S. Wippermann et al., Phys. Rev. Lett. 100, 106802 (2008)]. The present DFT calculations identified two of the features as O atoms incorporated in the interstitial region between the In wire and subsurface Si layer.

show abstract

Control of phase transition in quasi-one-dimensional atomic wires by electron doping

Cited by 27 publications

References 17 publications

Roles of defects induced by hydrogen and oxygen on the structural phase transition ofSi(111)4×1-In

Roles of defects induced by hydrogen and oxygen on the structural phase transition ofSi(111)4×1-In

Self-organized atomic nanowires of noble metals on Ge(001): atomic structure and electronic properties

Initial stages of oxygen adsorption onIn/Si(111)-4×1

Contact Info

Product

Resources

About