2020
DOI: 10.1116/1.5145217
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Control of polymorphism during epitaxial growth of hyperferroelectric candidate LiZnSb on GaSb (111)B

Abstract: A major challenge for ferroelectric devices is the depolarization field, which competes with and often destroys long-range polar order in the limit of ultrathin films. Recent theoretical predictions suggest a new class of materials, termed hyperferroelectics, that should be robust against the depolarization field and enable ferroelectricity down to the monolayer limit. Here we demonstrate the epitaxial growth of hexagonal LiZnSb, one of the hyperferroelectric candidate materials, by molecular-beam epitaxy on G… Show more

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Cited by 11 publications
(2 citation statements)
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“…unscreened depolarization field under open circuit boundary conditions. Such features thus make hyperFE systems suitable for applications as low dimensional functional materials [3][4][5][6][7]; moreover, the existence of a switchable electric polarization in hyperFEs can be allowed in metals and not restricted to only insulators and semiconductors as for standard FEs [4,8,9].…”
Section: Introductionmentioning
confidence: 99%
“…unscreened depolarization field under open circuit boundary conditions. Such features thus make hyperFE systems suitable for applications as low dimensional functional materials [3][4][5][6][7]; moreover, the existence of a switchable electric polarization in hyperFEs can be allowed in metals and not restricted to only insulators and semiconductors as for standard FEs [4,8,9].…”
Section: Introductionmentioning
confidence: 99%
“…It remains an outstanding challenge to control the Fe/V stoichiometry, which is not self-limited when using atomic Fe and V fluxes from effusion cells. Re-cent demonstrations MBE-grown LiZnSb, in which all three atomic species are volatile, suggest that it may be possible to control the full stoichiometry of a ternary Heusler compound [42]. However, for transition metal based Heuslers such as FeVSb, control of the X/Y transition metal ratio may require replacing one or both of the elemental transition metal sources with a volatile metalorganic precursor.…”
mentioning
confidence: 99%