2016
DOI: 10.1103/physrevb.94.121403
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Control of recoil losses in nanomechanical SiN membrane resonators

Abstract: In the context of a recoil damping analysis, we have designed and produced a membrane resonator equipped with a specific on-chip structure working as a "loss shield" for a circular membrane. In this device the vibrations of the membrane, with a quality factor of 10 7 , reach the limit set by the intrinsic dissipation in silicon nitride, for all the modes and regardless of the modal shape, also at low frequency. Guided by our theoretical model of the loss shield, we describe the design rationale of the device, … Show more

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Cited by 25 publications
(31 citation statements)
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“…This frame is suspended on four points with alternating flexural and torsional springs, forming an on-chip "loss shield" structure [20]. More information about the design, fabrication and the characteristic of the device can be found in Borrielli et al [21] and Serra et al [22,23]. The theoretical resonance frequencies of the drum modes in a circular membrane are given by the expression f mn = f 0 α mn where α mn is the n-th root of the Bessel polynomial J m of order m, and f 0 = 1 π T ρ 1 Φ (T is the stress, ρ the density, Φ the diameter of the membrane).…”
Section: Methodsmentioning
confidence: 99%
“…This frame is suspended on four points with alternating flexural and torsional springs, forming an on-chip "loss shield" structure [20]. More information about the design, fabrication and the characteristic of the device can be found in Borrielli et al [21] and Serra et al [22,23]. The theoretical resonance frequencies of the drum modes in a circular membrane are given by the expression f mn = f 0 α mn where α mn is the n-th root of the Bessel polynomial J m of order m, and f 0 = 1 π T ρ 1 Φ (T is the stress, ρ the density, Φ the diameter of the membrane).…”
Section: Methodsmentioning
confidence: 99%
“…The data time series required for our analysis were obtained by operating a cavity optomechanics setup based on the membrane in the middle configuration. The circular, high-stress SiN x membrane (shown as photographic inset Fig.1(a)) is integrated in an on-chip "loss shield" structure [16] and placed in a Fabry-Perot cavity of length 4.38 mm and cavity Finesse of F ≈ 13000 (half-linewidth κ = 1.3 MHz × 2π). The membrane was placed at a fixed position, 2 mm, from the cavity output mirror.…”
Section: Fig 1: (A)mentioning
confidence: 99%
“…In this frequency range, the silicon die cannot be considered as a rigid body but its full modal response must be considered in evaluating its admittance, because a support resonating at the same frequency of the membrane can be very effective in absorbing mechanical energy. For this reason we have developed a theoretical model [19] where we evaluate the loss when the membrane and support are fully-coupled, i.e. allowing for the transfer of energy in both ways.…”
Section: Total Lossesmentioning
confidence: 99%
“…Indeed, this figure of merit determines the number of coherent oscillations in the presence of thermal fluctuations, and the minimum requirement for room-temperature quantum optomechanics is Q × f > 6.2 THz [2]. We have recently proposed a novel coupled oscillators model for the mechanical losses in a membrane oscillator [19], considering the mutual interaction between the membrane and the frame in a recoil losses analysis. We were able to design an effective shield for the losses for all mechanical modes also in the low frequency range.…”
Section: Introductionmentioning
confidence: 99%