Control of relative etch rates of SiO2 and Si in plasma etching

Heinecke, R. A.

doi:10.1016/0038-1101(75)90184-7

Cited by 191 publications

(47 citation statements)

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“…The etching mechanisms of the C 4 F 8 /SF 6 plasma chemistry have been investigated for deep etching [7][8][9][10][11][12]. This section gives an investigation of the etch rates as a function of the SF 6 ratio, platen power and chamber pressure in a low power regime suitable for the patterning of shallow nanostructures.…”

Section: Icp Etching Of Planar Substratesmentioning

confidence: 99%

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Harvey-Collard

Jaouad

Drouin

et al. 2013

Microelectronic Engineering

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Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si, SiO2 and electroresist are measured depending on the SF6 ratio, platen power and chamber pressure and used to optimize the a-Si:SiO2 etch selectivity. The results on nanostructures show that the presence of an insulating etch-stop layer affects the passivation ratio required to achieve vertical sidewalls. A low pressure is also necessary in order to etch the silicon nanostructure embedded into the oxide nanotrenches to form a highly conformable a-Si nanowire. We argue that both of these behaviors could be explained by surface charging effects. Finally, etching of 20 nm a-Si nanowires that cross 15 nm trenches in oxide with vertical sidewalls and a 4.3:1 a-Si:SiO2 etch selectivity is demonstrated. This etching process can be used in applications where nanotopography is present such as single electron transistors or multigate transistors.

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Section: Icp Etching Of Planar Substratesmentioning

confidence: 99%

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Harvey-Collard

Jaouad

Drouin

et al. 2013

Microelectronic Engineering

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“…Early plasma etch systems employed capacitively coupled barrel designs that operated at high pressure, which produced isotropic etching. Reactive ion plasma etching [26] was developed to enable improved control of feature size, dimensions and anisotropy of etch for SiO 2 [27] and Al [28]. Through the 1980s, plasma etch and reactive ion etching were developed to enable transfer of sub-micrometre features into the films on the silicon.…”

Section: (C) Etching Technologymentioning

confidence: 99%

Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

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“…reactions [1], [5], and [6]) and on the extent to which available F atoms are used to volatilize Si rather than O (cf. The yields depend on the F/C ratio in the reactant ion (cf.…”

Section: [6]mentioning

confidence: 99%

Mechanism of Dry Etching of Silicon Dioxide: A Case of Direct Reactive Ion Etching

Steinbrüchel¹,

Lehmann²,

Frick³

1985

J. Electrochem. Soc.

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Reactive sputter etching of SiO=, with CHF3-O~ plasmas has been investigated in a parallel-plate reactor by combining etch-rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer), and by examining etched profiles in the SEM. The importance of geometrical variables, such as plate separation and plate area, and the electrical parameters appropriate for characterizing the discharge are discussed. Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO~ with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO~ direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured etch yields are consistent with this picture. However, the plasma chemistry has a decisive influence on the etch rate of Si, and thus on the etch selectivity of SiO~ with respect to Si, and also on the exact shape of profiles etched into SiO2.

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Control of relative etch rates of SiO2 and Si in plasma etching

Cited by 191 publications

References 1 publication

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Lithography for enabling advances in integrated circuits and devices

Mechanism of Dry Etching of Silicon Dioxide: A Case of Direct Reactive Ion Etching

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