Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Harvey-Collard, Patrick; Jaouad, Abdelatif; Drouin, Dominique; Pioro‐Ladrière, Michel

doi:10.1016/j.mee.2013.02.099

“…Poly-Si nanostructures are defined by inductively coupled plasma (ICP) etching. The vertical sidewalls are an important characteristic for realizing nanocylinders of 100 nm diameter, where C 4 F 8 gas has a role in side wall passivation during SF 6 plasma etching [23][24][25] . After nanoscale patterning via e-beam lithography and ICP etching, a low index material of SiO 2 (n~1.45 at 550 nm) are filled among Si rods.…”

Section: Methodsmentioning

confidence: 99%

Subwavelength pixelated CMOS color sensors based on Anti-Hermitian metasurface

Smalley

¹

,

Ren

²

,

Lee

³

et al. 2021

Active Photonic Platforms XIII

0

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The demand for essential pixel components with ever-decreasing size and enhanced performance is central to current optoelectronic applications, including imaging, sensing, photovoltaics and communications. The size of the pixels, however, are severely limited by the fundamental constraints of lightwave diffraction. Current development using transmissive filters and planar absorbing layers can shrink the pixel size, yet there are two major issues, optical and electrical crosstalk, that need to be addressed when the pixel dimension approaches wavelength scale. All these fundamental constraints preclude the continual reduction of pixel dimensions and enhanced performance. Here we demonstrate subwavelength scale color pixels in a CMOS compatible platform based on anti-Hermitian metasurfaces. In stark contrast to conventional pixels, spectral filtering is achieved through structural color rather than transmissive filters leading to simultaneously high color purity and quantum efficiency. As a result, this subwavelength anti-Hermitian metasurface sensor, over 28,000 pixels, is able to sort three colors over a 100 nm bandwidth in the visible regime, independently of the polarization of normally-incident light. Furthermore, the quantum yield approaches that of commercial silicon photodiodes, with a responsivity exceeding 0.25 A/W for each channel. Our demonstration opens a new door to sub-wavelength pixelated CMOS sensors and promises future high-performance optoelectronic systems.

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“…Poly-Si nanostructures are defined by inductively coupled plasma (ICP) etching. The vertical sidewalls are an important characteristic for realizing nanocylinders of 100 nm diameter, where C 4 F 8 gas has a role in side wall passivation during SF 6 plasma etching 23 – 25 . After nanoscale patterning via e-beam lithography and ICP etching, a low index material of SiO 2 ( n ~ 1.45 at 550 nm) are filled among Si rods.…”

Section: Methodsmentioning

confidence: 99%

Subwavelength pixelated CMOS color sensors based on anti-Hermitian metasurface

Smalley

¹

,

Ren

²

,

Lee

³

et al. 2020

View full text Add to dashboard Cite

The demand for essential pixel components with ever-decreasing size and enhanced performance is central to current optoelectronic applications, including imaging, sensing, photovoltaics and communications. The size of the pixels, however, are severely limited by the fundamental constraints of lightwave diffraction. Current development using transmissive filters and planar absorbing layers can shrink the pixel size, yet there are two major issues, optical and electrical crosstalk, that need to be addressed when the pixel dimension approaches wavelength scale. All these fundamental constraints preclude the continual reduction of pixel dimensions and enhanced performance. Here we demonstrate subwavelength scale color pixels in a CMOS compatible platform based on anti-Hermitian metasurfaces. In stark contrast to conventional pixels, spectral filtering is achieved through structural color rather than transmissive filters leading to simultaneously high color purity and quantum efficiency. As a result, this subwavelength anti-Hermitian metasurface sensor, over 28,000 pixels, is able to sort three colors over a 100 nm bandwidth in the visible regime, independently of the polarization of normally-incident light. Furthermore, the quantum yield approaches that of commercial silicon photodiodes, with a responsivity exceeding 0.25 A/W for each channel. Our demonstration opens a new door to sub-wavelength pixelated CMOS sensors and promises future high-performance optoelectronic systems.

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“…A thickness of 250 nm and width of 165 nm a-Si waveguide is achieved through inductively coupled plasma (ICP) etching. 24 Next, SiO 2 is deposited and etched to form a cladding on the left side of the a-Si waveguide. Second, the vertical stacked layers of HfO 2 -ITO-HfO 2 are deposited and patterned by following a similar process as the horizontal stacked layers fabrication.…”

Section: Introductionmentioning

confidence: 99%

Numerical analysis and design of polarization-multiplexing modulator utilizing the epsilon-near-zero behavior in ITO-HfO2-graphene stacked layers

Fan,

Shen,

Chen

et al. 2024

Opt. Eng.

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Based on the ITO-HfO 2 -graphene stacked layers, a modulator that can achieve independent modulation of TE mode and TM mode within a single silicon waveguide is proposed. Graphene and ITO are employed as electrodes of graphene-HfO 2 -ITO capacitor. Under applied voltage, carriers accumulate within the 5 nm thick ITO film, leading to a modification of the optical dielectric constant. Using ITO's epsilon-nearzero behavior and its sensitivity to optical polarization, a modulation depth (MD) of no <2.5 dB∕μm and an insertion loss of less than 0.054 dB∕μm are achieved at the 1.55 μm. Furthermore, when modulating TE and TM modes independently, the mode crosstalk between the two modes is <0.02 dB∕μm, demonstrating the high performance of the polarization-multiplexing (PM) modulator. At near-infrared band of 1.35 to 1.6 μm, the broadband properties of ITO and graphene are used to achieve an MD of no <2.2 dB∕μm while maintaining mode crosstalk and insertion loss of less than 0.06 dB∕μm. This modulator has robustness to top Si waveguide sidewall angle and compatibility with complementary metal oxide semiconductor processes. It is expected to be used in highly integrated polarization de-multiplexing and polarization switching systems.

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Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Cited by 13 publications

References 16 publications

Subwavelength pixelated CMOS color sensors based on Anti-Hermitian metasurface

Subwavelength pixelated CMOS color sensors based on Anti-Hermitian metasurface

Subwavelength pixelated CMOS color sensors based on anti-Hermitian metasurface

Numerical analysis and design of polarization-multiplexing modulator utilizing the epsilon-near-zero behavior in ITO-HfO2-graphene stacked layers

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