2020
DOI: 10.1021/acs.nanolett.0c01850
|View full text |Cite
|
Sign up to set email alerts
|

Control of Spin–Orbit Torques by Interface Engineering in Topological Insulator Heterostructures

Abstract: Bi 1−x Sb x) 2 Te 3 topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the magnetization of a ferromagnet (FM). The origin of the torques, however, remains elusive, while the implications of hybridized 1 arXiv:2009.08215v1 [cond-mat.mes-hall] 17 Sep 2020 states and the strong material intermixing at the TI/FM interface are essentially unexplored. By combining interface… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

4
54
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
5
2

Relationship

1
6

Authors

Journals

citations
Cited by 58 publications
(58 citation statements)
references
References 37 publications
4
54
0
Order By: Relevance
“…Motivated by these unique advantages, experimental studies began to focus on current-induced SOT in various TI/FM heterostructures. [101][102][103][104][105][106][107][108] Mellnik et al first studied currentinduced SOT in Bi 2 Se 3 /Py heterostructure by ST-FMR (Figure 6c). [30] As shown in Figure 6d, the ST-FMR signal exhibited a large symmetric peak, which suggests a considerable conventional damping-like SOT DL .…”
Section: Topological Insulatorsmentioning
confidence: 99%
See 3 more Smart Citations
“…Motivated by these unique advantages, experimental studies began to focus on current-induced SOT in various TI/FM heterostructures. [101][102][103][104][105][106][107][108] Mellnik et al first studied currentinduced SOT in Bi 2 Se 3 /Py heterostructure by ST-FMR (Figure 6c). [30] As shown in Figure 6d, the ST-FMR signal exhibited a large symmetric peak, which suggests a considerable conventional damping-like SOT DL .…”
Section: Topological Insulatorsmentioning
confidence: 99%
“…Therefore, different SOTs can be tuned via interface engineering. [108] In the heterostructures of high-resistive TI and low-resistive metal magnets, most of the electrical current is shunted through the magnetic metal layer, which leads to a weak SOT strength. By replacing the metal magnet with a magnetic insulator, the SOT strength can be strongly enhanced.…”
Section: Topological Insulatorsmentioning
confidence: 99%
See 2 more Smart Citations
“…Crosssectional high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) has indicated intermixing at the TaTe 2 /Py interface which is likely to affect the effective SOTs due to a change in the local electronic environment and the spin mixing conductance of the interface. Interestingly, a change in the SOTs in topological-insulator/ferromagnet devices due to intermixing at the interface has been recently reported (Bonell et al, 2020). Here we point out that in addition to the changes in the SOTs arising from the different electronic structures for devices using different FM layers (e.g., Py, Co, CoFeB), the materials intermixing should also be carefully considered and potentially quantified in order to obtain a more in-depth understanding of the microscopic mechanisms involved.…”
Section: Semi-metallic Tmdsmentioning
confidence: 99%