Control of structure and electrical properties of lead-zirconium-titanate-based ferroelectric capacitors produced using a layer-by-layer ion beam sputter-deposition technique

Abstract

Structural and electrical characterization of microcrystalline silicon films prepared by a layer-by-layer technique with a plasma-enhanced chemical-vapor deposition system

Growth of (111)-oriented PZT on RuO 2 (100)/Pt(111) electrodes by in-situ sputtering

“…In all cases, PZT deposition was preceded by deposition of a 10 nm thick TiO 2 sacrificial barrier layer to prevent degradation of the RuO 2 surface [11], followed by a nominally 3 nm thick PbTiO 3 film allowing better perovskite nucleation [17,19]. Control of PZT orientation by in-situ sputtering require nucleation with Ti-rich compositions.…”

Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories

“…The pioneering work on RuO 2 for PZT-based capacitors was subsequently confi rmed by work performed by several groups using other electrically conductive oxide electrodes (e.g., RuO 2 [ 33 ], hybrid Pt/RuO 2 [ 34 ], La 0.5 Sr 0.5 CoO 3 (LSCO) [ 35 ], and hybrid Pt/LSCO [ 36 ]. More recently, IrO x [ 37 ] and hybrid Ir/IrO x [ 38 ] electrodes were developed to produce fatigue-free PZT capacitors, and these electrodes are being used in embedded FeRAMs, currently in commercial microcontroller systems [ 38 ].…”

In-situ sputter deposition of PT and PZT films on Platinum and RuO2 electrodes

“…Typical parameters are given in [9,12]. For PZT, in order to enhance crystallisation and orientation, a 30 nm thick seed Ti-rich layer was deposited prior to the main PZT deposition [4,9]. …”

“…On Pt, it had been found [4,9] that a thin (30 nm) seed PT layer could nucleate growth of PZT along <100>. For RuO 2 [10], a second phase, identified as lead ruthenate (Pb 2 Ru 2 O 7 ), was seen at the RuO 2 -PZT interface.…”

“…Their dielectric, piezoelectric (PZT) and pyroelectric (PT) properties can be applied to the fabrication of integrated devices such as memories [1], micromechanical devices [2,3], and infrared detector arrays. For memories, RuO 2 has emerged as an alternative bottom electrode to Pt, leading to better fatigue properties [4].…”