Control of substrate heat flows by gaseous heat absorber as a method of epitaxy from solution-melt

Abstract

The features of liquid phase epitaxy of heterostructures are considered. The main requirements for conditions at the substrate/solution-melt interface are defined. The use of a gaseous heat absorber to control the substrate heat flow to provide the required temperature–time profiles at the crystallization interface is proposed. Planar heteroepitaxial GaSb/InAs layers are obtained using a hydrogen gas heat absorber. The correctness of the simulation of heat and mass transfer for the determination of the consumption of the preliminary gaseous heat absorber is demonstrated.