Control of the Nucleation Density of Molybdenum Disulfide in Large-Scale Synthesis Using Chemical Vapor Deposition

Xu, Haitao; Zhou, Weipeng; Zheng, Xiaowu; Huang, Jiayao; Feng, Xiliang; Li, Ye; Xu, Guanjin; Lin, Fang

doi:10.3390/ma11060870

Cited by 18 publications

(8 citation statements)

References 32 publications

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“…The relative contribution of excitons and triangles determines the peak position of PL spectrum. The shape of PL spectrum is consistent with the previous reported result of monolayer MoS 2 obtained by mechanically exfoliated, CVD, physical vapor deposition (PVD), and so on [27,28,29]. Due to strain during thermal growth and different test environments, the peak position of A and B exciton results in a small fluctuation shift, which is within the allowable range [30].…”

Section: The Characterization Of Monolayer Mos2 Under Optimal Growsupporting

confidence: 88%

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

et al. 2018

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The transition-metal chalcogenides (TMDs) are gaining increased attention from many scientists recently. Monolayer MoS2 is an emerging layered TMD material with many excellent physical and electrical properties. It can be widely used in catalysis, transistors, optoelectronics and integrated circuits. Here, the large-sized monolayer MoS2 is grown on the silicon substrate with a 285-nm-thick oxide layer by atmospheric pressure chemical vapor deposition (APCVD) of sulfurized molybdenum trioxide. This method is simple and it does not require vacuum treatment. In addition, the effects of growth conditions, such as sulfur source, molybdenum source, growth temperature, and argon flow rate on the quality and area of MoS2 are further studied systematically. These analysis results help to master the morphology and optical properties of monolayer MoS2. The high quality, excellent performance, and large-size monolayer MoS2 under the optimal growth condition is characterized by optical microscopy, AFM, XPS, photoluminescence, and Raman spectroscopy. The Raman spectrum and PL mapping show that the grown MoS2 is a uniform triangular monolayer with a side length of 100 μm, which can pave the way for the applications of photodetectors and transistors.

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Section: The Characterization Of Monolayer Mos2 Under Optimal Growsupporting

confidence: 88%

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

et al. 2018

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“…Therefore, nucleation barriers and thus the nucleation densities of TMDCs are difficult to control. So far, the typical nucleation densities of a few thousands per mm 2 are observed and the largest single crystalline TMDC island so far obtained is less than one millimeter in size. ,− …”

Section: Synthesis Of Wssc Tmdc Monolayersmentioning

confidence: 99%

Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

2021

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The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS 2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.

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“…Many researchers have focused on the two-dimensional materials with the single layer of atomic thickness [5]. The two-dimensional material is used as the channel material compared to the traditional bulk material, which can not only help to suppress the short channel effect, but also effectively reduces the static leakage current [6,7]. In addition, the two-dimensional materials also have the higher specific surface area, excellent mechanical strength, higher optical transparency, and various excellent photoelectric characteristics, so it can be widely used in the gas sensors [8], flexible electronics [9], and photodetectors [10].…”

Section: Introductionmentioning

confidence: 99%

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

et al. 2019

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The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS2) is grown on the SiO2/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS2 is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS2 is a monolayer. Then, the monolayer MoS2 is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS2-based FET are tested to obtain the electrical performance. The switching ratio is 103, the field effect mobility is about 0.86 cm2/Vs, the saturation current is 2.75 × 10−7 A/μm, and the lowest gate leakage current is 10−12 A. Besides, the monolayer MoS2 can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS2-based FET are relatively poor, which requires the further optimization of the monolayer MoS2 growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS2-based FETs in the future low-power optoelectronic integrated circuits.

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Control of the Nucleation Density of Molybdenum Disulfide in Large-Scale Synthesis Using Chemical Vapor Deposition

Cited by 18 publications

References 32 publications

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS2 by APCVD

Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

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