Control of Threshold Voltage and Saturation Mobility Using Dual-Active-Layer Device Based on Amorphous Mixed Metal–Oxide–Semiconductor on Flexible Plastic Substrates

Marrs, Michael; Moyer, Curt; Bawolek, Edward J.; Cordova, Rita; Trujillo, Jovan; Raupp, Gregory B.; Vogt, Bryan D.

doi:10.1109/ted.2011.2161764

Cited by 49 publications

(37 citation statements)

References 17 publications

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“…114,155 Since standard PI exhibits a yellowish to brownish color, other polymeric substrates have been introduced to benefit from their transparency in the visual wavelength range. These materials, which are, in general, also cheaper and more easily available, include PET, 29,69,96,165,171,180,184,188 polyethylene naphthalate (PEN), 38,40,41,134,136,139,149,153,158,163,[166][167][168]173,181,202 polyetheretherketone (PEEK), 203 polycarbonate (PC), 154,157 polypropylene (PP) based synthetic paper, 204 parylene, 80,141 polyethersulfone (PES), 178 water-soluble polyvinyl alcohol (PVA), 82 as well as polydimethylsiloxane (PDMS). 78,132,147,[205][206][207] In particular, PDMS is also stretchable and biocompatible, but at the same time hard to process using standard fabrication techniques.…”

Section: Methodsmentioning

confidence: 99%

“…Finally, mechanically active multilayer substrates using a highly cross-linked hydrogel swelling layer and a stiff PI have been shown. Typical adhesion or buffer layers are made of silicon nitride (SiN x ), 92,106,113,114,140,[143][144][145][146]150,151,173,182,183 silicon oxide (SiO x ), 78,82,135,148,154,157,168,170,181,205 and photoresist sandwiched between SiN x and SiO x . 158 Organic materials, 78,82,136,148,154,157,168,170,181,205 in particular, SU8, 153 or PVP is especially well-suited as smoothing layers.…”

Section: Methodsmentioning

confidence: 99%

“…These requirements resulted in the use of different metals: Al, 77,149,152,154,157,165,170,172,179,208 Au, 38,167 Cu, 147 Mo, 41,82,137,138,148,164,168 palladium (Pd), 145 and Ti, 90,93,144,169 whereas Mo and Ti seem to exhibit the lowest specific contact resistance R C . At the same time, a big variety of multi-layer contacts have been developed to combine the advantageous properties of different materials; recent examples are: Ti/ Au, 59,69,81,84,113,140,141,143,146,150,151,[181][182][183] Ni/Au, 79 Mo/ Al, 166,173 Cr/Au, 114 Mo/AlNd, 156 Cr/Au/Cr, 92 Mo/Al/Mo, 153 Ti/Au/Ti, 162 or Ti/IZO. …”

Section: à2mentioning

confidence: 99%

“…40,41,132,136,139,153,[158][159][160]163,[166][167][168][169][170]173,174,202,204 This can either be done using native adhesion forces or utilizing an additional adhesive. Alternatively, a flexible foil can also be mechanically fixed on particularly designed holders using metallic clamps.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

“…Finally, Marrs et al demonstrated flexible dual-layer TFTs (with IGZO at the interface with the dielectric and with highly doped IZO close to the source/drain contacts) yielding improved stability and effective mobility. 173 (III) Also, the choice of the gate dielectric plays a key role in the TFT optimization, by directly influencing the specific gate dielectric capacitance (and therefore also the drain current and the sub-threshold swing) of the device. One possibility to improve C ox is the use of multi-layer gate dielectrics with good interface quality, such as HfO 2 /TiO 2 , PVP/TiO 2 , SiO 2 /SiN x , and HfO 2 /TiO 2 /HfO 2 .…”

mentioning

confidence: 99%

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: à2mentioning

confidence: 99%

Section: Fabrication Techniquesmentioning

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Anodized ITO Thin‐Film Transistors

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et al. 2014

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1 www.MaterialsViews.com wileyonlinelibrary.com oxide semiconductor in itself and could be used as the active layers of TFTs. The high carrier density would prevent the devices from being switched-off normally; and the polycrystalline nature would bring about the poor device performance uniformity over large area.In an earlier effort to fabricate ITO TFTs, the sputtered ITO nano-clusters diffracting into the masked shadow regions were used to form an ultra-thin channel layer. [ 14 ] Clearly, this technique has a diffi culty in controlling the morphology of the self-assembled fi lm and is not compatible with the mainstream fl at panel display (FPD) technologies. An alternative effort to build the ITO TFTs was to make the TFTs have a junctionless structure. [ 15 ] In doing so, for turning the TFT off properly, the channel layer must be thin enough and the gate capacitance must be large enough to enable the channel layer depleted fully.Therefore, the feasible technology for ITO TFTs with a combination of simple process and high device performance has not been well established so far. On the other hand, a homojunction (HJ) structure with source/drain and channel layers made of the same material is a preferable structure for TFTs. In the case of poly-Si TFTs, this kind of structure can be easily obtained by a self-aligned ion implantation to dope the source/ drain regions. However, it is diffi cult to adopt this structure in the case of OS TFTs. In this work, an "All by ITO" TFT technology featuring the ideal homo-junction device structure is realized by introducing an anodic oxidation (anodization) technique to locally tailor the ITO properties for the fi rst time.The anodic oxidation technique has often been used to grow the metal oxide dielectrics due to the favorable features such as simple equipment requirement, low cost and high throughput. [16][17][18] The formation of anodic oxide fi lms has been a long discussion since 1934. [ 19 ] Although numerous models have been proposed to explain the kinetic, thermodynamic, structural and electronic properties, no single theory has yet emerged to provide comprehensive descriptions of the individual processes and explanations for the differences because of the complexity of various real metal-oxide systems. In spite of this, it is commonly recognized that a large number of metals when anodically polarized, exhibit the so-called high-fi eld conduction behavior which suggests a thermally activated, fi eld supporting hopping transport during the oxide growth. [ 20,21 ] Furthermore, the oxide fi lm growth is largely or exclusively resulted from the high-fi eld assisted inward movement of oxygen ions from the fi lm/solution interface to the metal/fi lm interface. [ 21 ] On the other hand, ITO is usually a highly degenerate n-type OS so that it acts more like a metal than a semiconductor. It Anodized ITO Thin-Film TransistorsYang Shao , Xiang Xiao , Longyan Wang , Yang Liu , and , and a subthreshold swing of 0.20 V per decade. This technology also allows a feasible V T adju...

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Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

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et al. 2023

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Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin‐film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnOx (a‐IGZO), UBPC identifies seven oxygen deep donor vacancy peaks that are independently confirmed by energetically matching to photoluminescence emission peaks. The subgap DoS from 15 different types of a‐IGZO TFTs all yield similar DoS, except only back‐channel etch TFTs can have a deep acceptor peak seen at 2.2 eV below the conduction band mobility edge. This deep acceptor is likely a zinc vacancy, evidenced by trap density which becomes 5‐6× larger when TFT wet‐etch methods are employed. Certain DoS peaks are strongly enhanced for TFTs with active channel processing damage caused from plasma exposure. While Ar implantation and He plasma processing damage are similar, Ar plasma yields more disorder showing a ≈2 × larger valence‐band Urbach energy, and two orders of magnitude increase in the deep oxygen vacancy trap density. Changing the growth conditions of a‐IGZO also impacts the DoS, with zinc‐rich TFTs showing much poorer electrical performance compared to 1:1:1 molar ratio a‐IGZO TFTs owing to the former having a ∼10 × larger oxygen vacancy trap density. Finally, hydrogen is found to behave as a donor in amorphous indium tin gallium zinc oxide TFTs.

show abstract

Control of Threshold Voltage and Saturation Mobility Using Dual-Active-Layer Device Based on Amorphous Mixed Metal–Oxide–Semiconductor on Flexible Plastic Substrates

Cited by 49 publications

References 17 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Anodized ITO Thin‐Film Transistors

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

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