Control over Self‐Doping in High Band Gap Perovskite Films

Abstract

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/aenm.201800398.Low-cost high band gap (≥1.8 eV) single-junction solar cells that can yield a high open-circuit voltage (V OC ) have been missing from the existing, available photo voltaic technologies. Such devices are needed to efficiently exploit the high-energy part of the solar spectrum for production of solar fuels and serve as a front cell in tandem cells, or in spectral splitting systems. The high band gap bromide perovskites (APbBr 3 , where A is a monovalent cation) that are part of the halide perovskite (HaP) family have been shown to function as absorbers in such solar cells. [1][2][3][4][5] The boost in efficiencies of iodide HaP-based

Progress of Surface Science Studies on ABX3‐Based Metal Halide Perovskite Solar Cells

“…[67] While for other Br-based perovskite films (Figure 7d) WF did not show a positive relationship with the substrate WF, [67] which was attributed due to the higher doping density and higher free carrier densities. [69] The above studies demonstrate that the electronic structure of perovskite materials is determined by their composition, density of surface defect states, and substrate WF. Furthermore, whether the substrate WF influences the perovskite surface energy level diagram also depends on the perovskite doping density and free carrier densities.…”

“…As mentioned above, the WF determination by the substrate might be valid for a perovskite film with a gap state-free interface and a low doping concentration, as systematically studied for organic semiconductors. [67,69] Cahen and co-workers studied the WF evolution of the lead bromide based perovskites as a function of the WF for the different substrates (Figure 7c,d). For mixed cation based perovskite (FA 0.85 MA 0.1 Cs 0.05 )PbBr 3 , the free carrier concentration is determined to be low [69] and WF increases with the increase of the substrate WF (Figure 7c).…”

“…[67,69] Cahen and co-workers studied the WF evolution of the lead bromide based perovskites as a function of the WF for the different substrates (Figure 7c,d). For mixed cation based perovskite (FA 0.85 MA 0.1 Cs 0.05 )PbBr 3 , the free carrier concentration is determined to be low [69] and WF increases with the increase of the substrate WF (Figure 7c). [67] While for other Br-based perovskite films (Figure 7d) WF did not show a positive relationship with the substrate WF, [67] which was attributed due to the higher doping density and higher free carrier densities.…”

Anorganische CsPbX3‐Perowskit‐Solarzellen: Fortschritte und Perspektiven

“…Diese Werte sind vergleichbar mit den typischen Werten fürhybride Cs-HaPs.Die Ladungsträgerlebensdauern sind variabler, was nicht überraschend ist. [55] Beim Vergleich dieser Werte ist zu beachten, dass HaP-Einkristalle im Allgemeinen geringere Fallendichten und wesentlich hçhere Werte der Ladungsträgerlebensdauern (und damit von L d )a ufweisen als polykristalline Schichten. 10 msf ürd ie CVD-Schichten im Vergleich zu ca.…”

“…Fürl çsungsverarbeitetes CsPbI 2 Br wurde ein Wert von 14 ns angegeben. [55] 1 mm [50] geschätzt, während füre inkristallines CsPbBr 3 L d -Werte fürE lektronen und Lçcher von ca.…”