Controllable preparation of silver nano-bowl coatings for suppressing secondary electron emission

Ma, Jianzhong; Wei, Linfeng; Bai, Yuanrui; Bao, Yan; Kang, Qiaoling; Zhang, Wenbo; Cui, Wanzhao; Hu, Taotao; Wu, Duoduo

doi:10.1016/j.tsf.2021.138633

Cited by 8 publications

(6 citation statements)

References 23 publications

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“…Therefore, it is urgently needed to develop useful techniques to lower the risk of multipactor for components loaded with alumina ceramic. In previous research projects, it has already been verified for various components that suppressing the SEY of sensitive surfaces can effectively reduce the risk of multipactor [6,13,14] and, therefore, many researchers have explored low-SEY engineering surfaces that can be applied in space science to improve the reliability of HPM systems [14][15][16][17][18][19][20][21][22]. Since SEY is sensitive to material intrinsic properties (atomic structure, energy band structure, etc), surface topography and surface conditions (adsorption, contamination, and oxidation) [23][24][25][26][27], SEY suppression techniques are designed to decrease SEY by changing the above parameters.…”

Section: Introductionmentioning

confidence: 99%

“…Since SEY is sensitive to material intrinsic properties (atomic structure, energy band structure, etc), surface topography and surface conditions (adsorption, contamination, and oxidation) [23][24][25][26][27], SEY suppression techniques are designed to decrease SEY by changing the above parameters. The mature low-SEY techniques mainly include surface roughening [14][15][16][17][18][19], coating with low-SEY films [20][21][22][28][29][30][31][32], growth of homogeneous nanostructures [33,34], and using low-SEY materials as a substitution.…”

Section: Introductionmentioning

confidence: 99%

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Ultralow electron emission yield achieved on alumina ceramic surfaces and its application in multipactor suppression

Wang

Mao

Zhen

et al. 2022

J. Phys. D: Appl. Phys.

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Alumina ceramics used in microwave systems are susceptible to the multiplication of secondary electron emission on the surface due to the influence of resonation between electrons and RF electrical field, and the detrimental effect of multipactor may be therefore triggered. For the alumina-loaded microwave components, low secondary electron yield (SEY) is urgent to be achieved on the inserted alumina surfaces for mitigating multipactor. In this work, for achieving an ultralow SEY surface of alumina, two recognized low-SEY treatments are combined. For the primary SEY suppression, a series of microstructures were fabricated on the alumina surfaces with various porosity and aspect ratio at hundred-micron scales by infrared laser etching. The microstructure with 52.14% porosity and 1.78 aspect ratio showed an excellent low-SEY property, which could suppress the SEY peak value (δm) of alumina from 2.46 to 1.00. For the secondary SEY suppression, the SEY dependence of TiN coating on sputtering parameters was studied, and the lowest δm of 1.19 was achieved when the gas flow ratio of Ar:N2 was 15:7.5. Whereafter, by depositing TiN ceramic coating onto the laser-etched porous samples, an ultralow SEY, δm equaled 0.69, was achieved on the alumina surfaces. The simulation work revealed the impact of dielectric surface charge on electron multiplication and uncovered the mechanism of using low SEY surfaces to inhibit multipactor. Some coaxial filters with alumina filled were fabricated for verification, the results revealed that the multipactor threshold increased from 125 W to 425 W after applying the TiN-coated porous alumina, and to 650 W after treating another multipactor sensitive area with the same low-SEY process. This work developed an advisable method to sharply reduce SEY, which is of great significance for the multipactor mitigation of the alumina-loaded microwave components.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultralow electron emission yield achieved on alumina ceramic surfaces and its application in multipactor suppression

Wang

Mao

Zhen

et al. 2022

J. Phys. D: Appl. Phys.

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“…There is a net electron flow from the emission samples into the vacuum when δ is greater than 1, in which a certain conductivity inside the samples will supplement the lost electrons. [34] The variation trend is related to the escape depth λ of internal secondary electrons, and λ obeys the law of power exponent absorption among the electron multiplication process based on the electronic cascade model. [33,38,39] A semiempirical theory (Dionne model) of SEY to describe the SEY curve is as follows: [35,36,40]…”

Section: Resultsmentioning

confidence: 99%

“…Then, the SEY of the samples was obtained using the formula in Refs. [34][35][36][37]. In the test process, the SEY curves were measured multiple times to ensure consistency and integrity, to avoid the effects of charge effects on the SEY δ = (I p − I s )/I p .…”

Section: Experimental Detailmentioning

confidence: 99%

Physical mechanism of secondary-electron emission in Si wafers

Zhao 赵,

Meng 孟,

Peng 彭

et al. 2024

Chinese Phys. B

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CMOS compatible RF/microwave devices such as filters and amplifiers, have been widely used in wireless communication systems. However, it often exists on secondary electron emission phenomenon among those RF/microwave devices based o silicon (Si) wafers, especially in high-frequency range. In this paper, we have studied the major factors that influence the secondary electron yield (SEY) in commercial Si wafers with different doping concentrations. It shows that SEY is suppressed as the increase of doping concentrations, corresponding to a relatively short effective escape depth λ. Meanwhile, the reduced narrow band gap is beneficial to suppress the SEY by through the first-principles calculations, in which the absence of shallow energy band below the conduction band would easily capture electrons. Thus, the new physical mechanism combined the effective escape depth and band gap, would provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.

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“…Generally, the multipactor effect is strongly related to the secondary electron yield (SEY) of the materials. [10][11][12] The two most commonly used methods to suppress SEY effects are micro-trapping structure surface [13][14][15][16][17] and surface coating with low SEY materials. [8] Ye et al reduced the maximum secondary electron emission coefficient (δ max ) by 60% by fabricating the triangular raised structures.…”

Section: Introductionmentioning

confidence: 99%

Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy

Hu¹,

Zhu²,

Zhao³

et al. 2022

Chinese Phys. B

Self Cite

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Reducing the secondary electron yield (SEY) of Ag-plated aluminum alloy is important for high-power microwave components. In this work, Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically. The secondary electron coefficient δ max of carbon films increases with the Cu contents increasing at first, and then decreases to 1.53 at a high doping ratio of 0.645. From the viewpoint of surface structure, the higher the content of Cu is, the rougher the surface is, since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network. However, from viewpoint of the electronic structure, the reduction of the sp2 hybrid bonds will increase the SEY effect as the content of Cu increases, due to the decreasing probability of collision with free electrons. Thus, the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.

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Controllable preparation of silver nano-bowl coatings for suppressing secondary electron emission

Cited by 8 publications

References 23 publications

Ultralow electron emission yield achieved on alumina ceramic surfaces and its application in multipactor suppression

Ultralow electron emission yield achieved on alumina ceramic surfaces and its application in multipactor suppression

Physical mechanism of secondary-electron emission in Si wafers

Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy

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