Effect of substrate temperature on the structural, electrical and optical behaviour of reactively sputtered Ag-Cu-O films M Hari Prasad Reddy, P Narayana Reddy, B Sreedhar et al. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications B Rajesh Kumar and T Subba Rao Correlation between the electrical and structural properties of aluminium-doped ZnO thin films obtained by direct current magnetron sputtering L Avril, Ph Guaino, F Maseri et al. High transmittance hetero junctions based on n-ITO/p-CuO bilayer thin films T P Jaya and P P Pradyumnan Defect analysis of sputter grown cupric oxide for optical and electronics application Goutam Kumar Dalapati, Rasanayagam Sivasayan Kajen, Saeid Masudy-Panah et al. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering C Zubizarreta, E G Berasategui, R Bayón et al. Influence of post-deposition thermal annealing on the properties of pulsed laser deposited tungsten layers K J Lethy, R Vinod Kumar, S Potdar et al.In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.