Controllable synthesis of non-layered two-dimensional plate-like CuGaSe₂ materials for optoelectronic devices

Abstract

Non-layered two-dimensional CuGaSe2 materials with high light-harvesting and excellent optoelectronic properties have been first synthesized by a cation exchange strategy.

2D hexagonal CuGaSe2 nanosheets by a microwave assisted synthesis method: photoresponse and optical study for optoelectronic applications

“…Non-layered 2D CGS plates, synthesized through a cation exchange strategy, show high light harvesting ability, excellent photoelectric performance of around 0.1 μA, and an absorption band edge of 700–800 nm, making them ideal for photodetector applications. 64 CGS nanorods, produced using the chemical bath deposition method with PVP as a capping agent, exhibit an I p of approximately 0.1 μA and negative differential resistance, suitable for oscillator and memory devices. 65 A fast ionic conductor acting CuGaS x Se 2− x catalyst demonstrates high crystallinity and produces an I p in the nA range.…”

“…[7][8][9] The synthesis approach of nanomaterials always plays an important role in tuning their electronic and optical characteristics. Various synthesis approaches have been adopted for the synthesis of CGS semiconductor nanoparticles, such as the hydro/solvothermal method, 5,10 colloidal synthesis, 11 hot injection method, 12 microwave synthesis, 13 etc. Recently, a lot of attention has been focused on the synthesis and properties of CGS nanoparticles (NPs).…”

Solution-phase controlled synthesis of Cu3NbSe4 nanocrystals for optoelectronic applications

“…In this work, the precursors were chosen based on empirical evidence and previous literature reports on similar materials. 41,42 For engineering a facile, scalable, and robust synthesis route to the Cu 3 NbSe 4 nanocrystals, we explored a colloidal synthesis method by the reaction of CuCl and NbCl 5 with Ph 2 Se 2 in the presence of OAm, which may act as a solvent and surface ligand, 43 as described in the Experimental section. The phase purity and crystal structure of the resulting products were confirmed by powder XRD measurements.…”

“…1b, two characteristic peaks Cu 2p 3/2 and Cu 2p 1/2 of Cu 3 NbSe 4 are located at 932.1 eV and 951.9 eV, respectively, with a peak splitting of 19.8 eV, indicating the presence of the oxidation state of Cu(I). 41,42,45 Note that the two small peaks located at 934.1 eV and 954.8 eV can be indexed to the oxidation of copper(I). 46 In Fig.…”

Novel solution synthesis of the overlooked cubic phase Cu2GeTe3 nanocrystals for optoelectronic devices

“…2b, two Cu 2p 3/2 and Cu 2p 1/2 peaks of Cu 2 GeTe 3 are located at 932.1 eV and 951.9 eV, respectively, with a peak splitting of 19.8 eV, indicating the presence of Cu + . 33,34 Two fragile peaks located at 933.2 eV and 953.9 eV can be assigned to the oxidation of copper(I). 35 The Ge 3d binding energy peak is observed at 30.8 eV in Fig.…”