2021
DOI: 10.1002/advs.202004249
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Controllable Thin‐Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Abstract: Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate the… Show more

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Cited by 66 publications
(52 citation statements)
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References 161 publications
(396 reference statements)
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“…Furthermore, even though "proof-of-concept" devices have been demonstrated based on doped TMDCs including vanadium dopants, [20][21][22][23][24] uniform distribution and precise control of the impurity density over a large scale and use of methods compatible with the state-of-the-art Si CMOS 300 mm process lines, still remains challenging. [19,25,26] Thus, scalable doping of TMDCs at a large temperature window with accurate control over the doping concentration is urgently needed.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Furthermore, even though "proof-of-concept" devices have been demonstrated based on doped TMDCs including vanadium dopants, [20][21][22][23][24] uniform distribution and precise control of the impurity density over a large scale and use of methods compatible with the state-of-the-art Si CMOS 300 mm process lines, still remains challenging. [19,25,26] Thus, scalable doping of TMDCs at a large temperature window with accurate control over the doping concentration is urgently needed.…”
Section: Introductionmentioning
confidence: 99%
“…To date, wafer-scale synthesis of near electronic-grade intrinsic TMDCs has been successfully realized at FEOL (>700 °C) [8][9][10] and BEOL(<500 °C) [11][12][13][14] compatible temperatures. However, while various doping techniques can tune the electrical conductivity of TMDCs (e.g., surface charge transfer doping, [15] electrostatic doping, [16] intercalation, [17] and substitutional doping, [18,19] ) progress is still limited in truly scalable doping. Furthermore, even though "proof-of-concept" devices have been demonstrated based on doped TMDCs including vanadium dopants, [20][21][22][23][24] uniform distribution and precise control of the impurity density over a large scale and use of methods compatible with the state-of-the-art Si CMOS 300 mm process lines, still remains challenging.…”
mentioning
confidence: 99%
“…However, the ionization energies of promising dopants in TMDCs are naturally one order of magnitude higher than that of bulk materials (530 meV for Nb dopants in monolayer MoS2), due to the weak response of dopant states to quantum confinement [56]. Thus, TMDCs desire relative high doping concentrations, which is generally percentage level to ensure the change in conductivity [80,81]. According to the structure of TMDCs (MX2, M = transition metals, such as Mo, W; X = S, Se, and Te), substitutional doping could occur at both M and X sites [17,82].…”
Section: Substitutional Dopingmentioning
confidence: 99%
“…Postgrowth substitutional doping of TMDCs could be divided into three kinds of doping methods: low energy plasma treatment, thermal diffusion, and photon-assisted substitutional doping. Among them, plasma treatment is one of the most commonly used doping processes, which first implants the energetic dopant ions into the host lattice to create vacancies, and then some dopants with depleted energies fill in the vacancies to finish the substitutional doping process [80]. However, the plasma treatment energy used for bulk materials is so high that it is much easier to penetrate TMDCs as their ultrathin thickness (< 1 nm for monolayers) [114,115].…”
Section: Postgrowth Substitutional Dopingmentioning
confidence: 99%
“…[ 5–8 ] In order to realize nanoscale logic devices with TMDCs, it is necessary to develop a localized, rewritable, and quantifiable modulation technique of their conducting polarity (n‐ and p‐types). [ 9,10 ] Up to now, the most widely employed modulation technique is chemical doping, including substitutional doping [ 11–13 ] and surface charge‐transfer doping. [ 14–16 ] Unfortunately, chemical doping is neither rewritable nor quantifiable well.…”
Section: Introductionmentioning
confidence: 99%