Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices

Cai, Yuanjing; Gong, Y.; Bai, J.; Yu, Xingwen; Zhu, Chenqi; Esendag, Volkan; Lee, Kean Boon; Wang, Tao

doi:10.1109/jphot.2018.2867821

Cited by 11 publications

(6 citation statements)

References 16 publications

(14 reference statements)

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“…The turn-on voltage of the integrated LED was 3.1 V at an injection current of 10 mA. In 2018, Cai et al from the University of Sheffield innovatively proposed a horizontally integrated circular HEMT-LED device, as shown in Figure 12 a,b [ 45 ]. The n-GaN of the LED is connected with the two-dimensional electron gas channel of HEMT to achieve uniform green light emission at the wavelength of 507 nm.…”

Section: Innovation and Development Of On-chip Integration Technologymentioning

confidence: 99%

Monolithic Integration of GaN-Based Transistors and Micro-LED

He,

Huang,

Tao

et al. 2024

Nanomaterials

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Micro-LED is considered an emerging display technology with significant potential for high resolution, brightness, and energy efficiency in display applications. However, its decreasing pixel size and complex manufacturing process create challenges for its integration with driving units. Recently, researchers have proposed various methods to achieve highly integrated micro-structures with driving unit. Researchers take advantage of the high performance of the transistors to achieve low power consumption, high current gain, and fast response frequency. This paper gives a review of recent studies on the new integration methods of micro-LEDs with different types of transistors, including the integration with BJT, HEMT, TFT, and MOSFET.

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Section: Innovation and Development Of On-chip Integration Technologymentioning

confidence: 99%

Monolithic Integration of GaN-Based Transistors and Micro-LED

He,

Huang,

Tao

et al. 2024

Nanomaterials

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“…GaN-based transistors, such as HEMTs and MOS, are thought to be good candidates to integrate with GaN-based LEDs for lowpower voltage supplies. In this way, residual materials can be removed, parasitic resistance and capacity can be dramatically reduced, and their response times can be reduced [212][213][214][215]. Recently, Lu et al [214] proposed an integrated device between vertical MOSFET and LED (Figure 18(a)).…”

Section: Gan-based Optoelectronic Integrationmentioning

confidence: 99%

Recent progress of integrated circuits and optoelectronic chips

Xiang

Han

Zhang

et al. 2021

Sci. China Inf. Sci.

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Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

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“…With the conventional approaches, the operating speed is limited and process complexity at die level is indispensable. In order to reduce the complexity of process and improve the switching speed, many research teams are interested in monolithic integration of GaN-based HEMTs and LEDs in recent years, which possesses advantages of higher switching speed, better reliability, and higher efficiency [ 1 , 2 , 3 , 4 , 5 , 6 ]. In general, there are two main approaches to integrate HEMTs and LEDs on a single chip.…”

Section: Introductionmentioning

confidence: 99%

Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT

et al. 2023

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In this study, AlGaN/GaN light-emitting HEMTs (LE-HEMT) with a single quantum well inserted in different locations in the epitaxy layers are fabricated and analyzed. For both structures, light-emitting originated from electrons in the 2DEG and holes from the p-GaN for radiative recombination is located in the quantum well. To investigate the importance of the location of single quantum well, optical characteristics are compared by simulation and experimental results. The experimental results show that the main light-emitting wavelength is shifted from 365 nm in the UV range to 525 nm in the visible range when the radiative recombination is confined in the quantum well and dominates among other mechanisms. Epi B, which has a quantum well above the AlGaN barrier layer in contrast to Epi A which has a quantum well underneath the barrier, shows better intensity and uniformity in light-emitting. According to the simulation results showing the radiative distribution and electron concentrations for both structures, the lower quantum efficiency is due to the diverse current paths in Epi A. On the other hand, Epi B shows better quantum confinement and therefore better luminescence in the same bias condition, which is consistent with experimental observations. These findings are critical for advancing the performance of LE-HEMTs.

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Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices

Cited by 11 publications

References 16 publications

Monolithic Integration of GaN-Based Transistors and Micro-LED

Monolithic Integration of GaN-Based Transistors and Micro-LED

Recent progress of integrated circuits and optoelectronic chips

Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT

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