Controlled Crystalline Orientation of Sputtered Ferromagnetic Films on Amorphous Substrates

Larson, H. W.; Walker, George

doi:10.1063/1.1709160

Cited by 5 publications

(1 citation statement)

References 4 publications

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“…Even a very small field, as small as 10Vcm -~ , affects the coalescence stage of metallic films [4]. Significant changes in the structure and growth behaviour of the oriented films have been reported [5][6][7] on application of a transverse field.Recently we have reported [8][9][10] the influence of the application of a longitudinal electric field at the time of deposition of CdS films and found that electrical quenching is responsible for various observations. The present studies on the X-ray structural characterization of CdS films is an extension of similar results.…”

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confidence: 99%

X-ray structural characterization of CdS films grown under longitudinal electric field

Lal

1987

J Mater Sci Lett

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The properties exhibited by materials in thin film forms are very different from those of the bulk materials particularly when the film thickness is sufficiently small. These properties are caused by peculiar structural behaviour exhibited by the film which, in turn, depends on its process of formation. In the case of film deposition by resistive heating many parameters (such as temperature of evaporation, temperature of substrates, chemical reaction between the deposits and the substrates, nature of substrates, presence of electric or magnetic fields etc.) influence the growth and orientation of the films. Studies of the effect of some of these parameters have been widely reported in the literature. The effect of application of an electric field (transverse field) on vapour-deposited material has been an area of interest over the past twenty years [1][2][3] and different theories have been proposed to explain the various experimental results. Even a very small field, as small as 10Vcm -~ , affects the coalescence stage of metallic films [4]. Significant changes in the structure and growth behaviour of the oriented films have been reported [5][6][7] on application of a transverse field.Recently we have reported [8][9][10] the influence of the application of a longitudinal electric field at the time of deposition of CdS films and found that electrical quenching is responsible for various observations. The present studies on the X-ray structural characterization of CdS films is an extension of similar results.Thin films of cadmium sulphide sandwiched between aluminium electrodes were deposited by suitable marking arrangements. Before deposition, an applied field system was incorporated by clipping the bottom electrode to the desired polarity of the power supply whilst the other terminal was grounded. Special care was taken while depositing the film under positive field because the whole system acts as a dipole which results in an additional electron current. Films were deposited at fields of _+35, +65 and +_ i06Vcm -~.Special precautions were taken in the sample preparation. Evaporated cadmium sulphide (with and without field) were scraped. The scraped material was coated onto the surface of fine glass fibre using a small amount of glue. Once the specimen rod was prepared it was mounted in its holder in the Debye-Scherrer camera. A copper target was used to produce the beam, and each sample was exposed for 5h. The asymmetrical method of film loading was used in the present study.The solution of the powder photograph begins with measurement of the line positions of the diffraction lines on the film. The apparatus used is essentially a box with an opal glass plate on top (illuminated from below) on which the film to be measured was placed. The cross hair was moved over the illuminated film from one diffraction line to the other and their positions were noted. Bragg's law of diffraction was used to evaluate d values of the various diffracted lines. Table I gives the d values for different specimens including the mothe...

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confidence: 99%

X-ray structural characterization of CdS films grown under longitudinal electric field

Lal

1987

J Mater Sci Lett

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Glow discharge sputtering

Westwood

1976

Progress in Surface Science

120

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Technique for Stripping Evaporated and Sputtered Films

Bienes¹,

Larson²,

Eubank³

1969

Proc. annu. meet. Electron Microsc. Soc. Am.

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The field of D.C. and R.F. Sputtering has grown rapidly in recent years and the question arose how the morphology of sputtered thin films compared with that of evaporated thin films. One of the stumbling blocks in shedding more light on this subject was the difficulty in stripping sputtered films from suitable amorphous substrates (similar to glass) with minimum introduction of strains. This search covered materials from which thin sputtered or evaporated films could easily and rapidly be detached.

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Controlled Crystalline Orientation of Sputtered Ferromagnetic Films on Amorphous Substrates

Cited by 5 publications

References 4 publications

X-ray structural characterization of CdS films grown under longitudinal electric field

X-ray structural characterization of CdS films grown under longitudinal electric field

Glow discharge sputtering

Technique for Stripping Evaporated and Sputtered Films

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