The search for Pb-free perovskite materials continues with limited success to find a suitable replacement for Pb with outstanding optoelectronic properties. Here we report Pb-free inorganic halide perovskite Cs 2 PtI 6 with excellent absorption coefficient, long minority carrier lifetime and optical bandgap of 1.4 eV. Atmospheric precursor based solution processing results in high quality Cs 2 PtI 6 with absorption coefficient of 4 10 � �� for photon energies > 1.5 eV and high minority carrier lifetimes of > 2 s indicating low defect density in the material. Superstrate n-i-p solar cells processed with the structure F:SnO 2 /CdS/Cs 2 PtI 6 /carbon/Cu show promising device efficiency of 13.88%. These planar devices processed under atmospheric conditions show low V oc deficit (< 0.3 V) without any hysteresis in forward and reverse scans indicating low trap densities. Pt offers an excellent model system for replacement of Pb due to high atomic number, oxidation resistance and stability. Cs 2 PtI 6 is an atmospherically stable phase under AM1.5G and 65 C upto 1000 hours.Organic-inorganic hybrid halide perovskite solar cells (HPSCs) have attracted immense attention because of excellent optoelectronic properties and record power conversion efficiency (PCE) has reached 25.2% from 3.8% within a few years. [1][2][3][4][5][6] Despite the very high efficiency already attained by HPSCs (ABX 3 ; A = MA, FA, Cs; B = Pb, Sn; X=I, Br, Cl) resulting from high absorption coefficient and electron-hole diffusion lengths; toxicity of Pb and stability of these materials are veritable issues. Replacing MA + and FA + with PEA + , BA + , Cs + has shown to enhance the stability of hybrid perovskite solar cells against thermal and moisture related degradation. [7][8][9][10][11] The superior optoelectronic properties of Pb-based halide perovskites are attributed to the inactive Pb 6s orbitals, and can be replaced by Ge 2+ , Sn 2+ , Sb 3+ , Bi 3+ , Cu 2+ with inactive s orbitals. Replacement of Pb 2+with Sn 2+ and Ge 2+ seems to be a logical solution for addressing the toxicity issues and results in excellent optoelectronic properties such as high absorption coefficient, high hole mobility resulting Accepted Article replacement for Pb with outstanding optoelectronic properties.

The effects of thermionic sputtering parameters on crystalline orientation and coercive force of magnetic films are discussed in this paper. By controlling the crystalline orientation within the film it is possible to produce films with a coercive-force range from 0.9 Oe to 35.8 Oe. The crystalline orientation is controlled by the magnetic field, the electric field, and the substrate position within the apparatus. All of the films were prepared on substrates which were not exposed to the sputtered material until the target had the adsorbed gases removed. The texture of the films is described by means of several x-ray photographs taken on a specially designed Laue camera, capable of giving a pattern from films as thin as 100 Å.

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The field of D.C. and R.F. Sputtering has grown rapidly in recent years and the question arose how the morphology of sputtered thin films compared with that of evaporated thin films. One of the stumbling blocks in shedding more light on this subject was the difficulty in stripping sputtered films from suitable amorphous substrates (similar to glass) with minimum introduction of strains. This search covered materials from which thin sputtered or evaporated films could easily and rapidly be detached.