Controlled deposition of CIGSE solar cells

Andriesh, Ac.A.M.; Verlan, V. I.; Malahova, Ludmila

doi:10.1016/j.tsf.2003.10.105

Cited by 4 publications

(2 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It means that the stoichiometry of target materials is preserved in the film. It is very difficult to compare our results with those reported by Andriesh et al [11] because their results were measured on the samples which have undergone the selenization process.…”

Section: Iii1 Cu(inga)se 2 Filmsmentioning

confidence: 67%

“…And growth of CuInSe2 films by PED has been shown [10]. Andriesh et al [11] also reported a two step deposition of CuIn 1−x Ga x Se 2 polycrystalline films with a "e-beam ablation" process followed by selenization at 500˚C. In this work, we show a PED system that has recently been set-up at Hanoi University of Science and its ability in growth of transparent conducting ZnO and Cu(InGa)Se 2 films.…”

Section: Introductionmentioning

confidence: 76%

See 1 more Smart Citation

Pulsed Electron Deposition (PED) - a Novel Tool for Growth of Thin Films

Sang¹,

Quang²,

Ngoc³

2012

Comm. in Phys.

View full text Add to dashboard Cite

Pulsed Electron Deposition (PED) is a novel technique that can be applied for growing high quality thin films. In this technique, we used an electron beam with a focused diameter of about 1 mm, the energy up to 15 kV, the frequency of 1-10 Hz, the pulse width of 100 ns and the total current of 1.5 kA generated in a discharge system. A remarkable advantage of this technique is the low deviation in composition from bulk to film. By using the PED technique the transparent coducting ZnO and Cu(InGa)Se\(_{2 }\) films were prepared. The effect of some deposition conditions on the properties of film has been examined and discussed. For Cu(InGa)Se\(_{2 }\), the best film was obtained at the discharge voltage of 12 kV and substrate temperature of 400\(^\circ\)C, while for ZnO, the best film was grown at the oxygen pressure of 1.3 Pa and at 400(^\circ\)C.

show abstract

Section: Iii1 Cu(inga)se 2 Filmsmentioning

confidence: 67%

Section: Introductionmentioning

confidence: 76%