CuInGaSe (CIGS) thin films were deposited on Mo/soda-lime glass substrates by electrodeposition at different potentials ranging from −0•3 to −1•1 V vs Ag/AgCl. Cyclic voltammetry (CV) studies of unitary Cu, Ga, In and Se systems, binary Cu-Se, Ga-Se and In-Se systems and quaternary Cu-In-Ga-Se were carried out to understand the mechanism of deposition of each constituent. Concentration of the films was determined by energy dispersive spectroscopy. Structure and morphology of the films were characterized by X-ray diffraction and scanning electron microscope. The underpotential deposition mechanism of Cu-Se and In-Se phases was observed in voltammograms of binary and quaternary systems. Variation in composition with applied potentials was explained by cyclic voltammetry (CV) data. A suitable potential range from −0•8 to −1•0 V was found for obtaining films with desired and stable stoichiometry. In the post-annealing films, chalcopyrite structure starts forming in the samples deposited at −0•5 V and grows on varying the applied potential towards negative direction. By adjusting the composition of electrolyte, we obtained the desired stoichiometry of Cu(In 0•7 Ga 0•3)Se 2 .
Pulsed Electron Deposition (PED) is a novel technique that can be applied for growing high quality thin films. In this technique, we used an electron beam with a focused diameter of about 1 mm, the energy up to 15 kV, the frequency of 1-10 Hz, the pulse width of 100 ns and the total current of 1.5 kA generated in a discharge system. A remarkable advantage of this technique is the low deviation in composition from bulk to film. By using the PED technique the transparent coducting ZnO and Cu(InGa)Se\(_{2 }\) films were prepared. The effect of some deposition conditions on the properties of film has been examined and discussed. For Cu(InGa)Se\(_{2 }\), the best film was obtained at the discharge voltage of 12 kV and substrate temperature of 400\(^\circ\)C, while for ZnO, the best film was grown at the oxygen pressure of 1.3 Pa and at 400(^\circ\)C.
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