Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing

Rühl, Maximilian; Ott, Christian; Götzinger, Stephan; Krieger, Michael; Weber, Heiko B.

doi:10.1063/1.5045859

Cited by 50 publications

(38 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The room-temperature PL shows an enhancement by a factor of up to 5.5 for V Si in sample 1 and by a factor of 2.3 for V Si V C in sample 3. Our results also confirm the conversion of V Si to V Si V C during annealing [55] from sample 2 to sample 3. The enhancement of V Si in sample 2 appears to be lower than that in sample 1.…”

Section: Methodssupporting

confidence: 86%

See 1 more Smart Citation

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Castelletto¹,

Atem²,

Inam³

et al. 2019

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.

show abstract

Section: Methodssupporting

confidence: 86%

“…A larger background was observed in samples 2 and 3, compared to samples 1 and 4. This is probably because the annealing may induce another emission with ZPLs around 820 nm and a sideband in our detection region [55].…”

Section: Resultsmentioning

confidence: 99%

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Castelletto¹,

Atem²,

Inam³

et al. 2019

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…Quenching mechanism of V Si creation were also observed in proton-writing of V Si [ 47 , 48 ] and laser writing [ 14 ]. Annealing at moderate temperature may reduce the concentration of the V C and improve the radiative lifetime time of the emitters, however, high-temperature annealing also convert the V Si in C Si V C [ 49 ] and divacancy [ 50 ] and possibly other defects are also formed [ 45 ].…”

Section: Resultsmentioning

confidence: 99%

Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

et al. 2020

View full text Add to dashboard Cite

Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabrication energy indicating that the color centers are created by photoinduced ionization. This work highlights the simplicity and flexibility of laser fabrication of color center arrays in relevant materials for quantum applications.

show abstract

“…The approach also proved useful for creating emitters at about 100 nm from the surface using a 60 keV proton beam. Generation and annihilation of color centers in 4H SiC by proton irradiation and annealing are also reported in [114]. Using low-temperature PL, they suggest a defect transformation, with proton irradiation first generating isolated silicon vacancies, then transformed into CAV complexes, finally transformed into likely intrinsic-related defects.…”

Section: Defects Fabrication: Materials Growth and Irradiationmentioning

confidence: 90%

“…Furthermore, their unknown origin impedes their ondemand fabrication. Passivation methods have been adopted for their removal based on graphene layer growth at 1650°C in argon ambient and annealing in the presence of no gas [114]. A dramatic improvement in photostability and an enhancement in the emission of SiC CAV was achieved after the growth of an epitaxial AlN passivation layer.…”

Section: Optically and Electrically Driven Single Photon Sources (Spss)mentioning

confidence: 99%

Silicon carbide color centers for quantum applications

2020

View full text Add to dashboard Cite

Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

show abstract

Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing

Cited by 50 publications

References 24 publications

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

Silicon carbide color centers for quantum applications

Contact Info

Product

Resources

About