Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method

Wang, J.; Li, T.; Wang, Q.; Wang, W.; Shi, Run; Wang, N.; Amini, Abbas; Cheng, Chun

doi:10.1016/j.mtadv.2020.100098

Cited by 40 publications

(37 citation statements)

References 150 publications

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“…More specifically, top‐down methods mainly include micromechanical exfoliation and liquid phase exfoliation methods, [ 15,33–42 ] while bottom‐up methods generally include chemical vapor deposition (CVD) and hydrothermal/solvothermal methods. [ 43–53 ]…”

Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning

confidence: 99%

Perspectives of 2D Materials for Optoelectronic Integration

Zhao

Zhang

et al. 2021

Adv Funct Materials

123

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2D materials show wide-ranging physical properties with their electronic bandgaps varying from zero to several electronvolts, offering a rich platform to explore novel electronic and optoelectronic functions. Notably, atomically thin 2D materials are well suited for integration in optoelectronic circuits, because of their ultrathin body, strong light-matter interactions, and compatibility with the current silicon photonic technology. In this paper, an overview of the state of the art of using 2D materials in optoelectronic devices and integration is provided. The optoelectronic properties of 2D materials and their typical electronic and optoelectronic applications including light sources, optical modulators, photodetectors, field-effect transistors, and logic circuits are summarized. The device configurations, operation mechanisms, and device figures-of-merit are introduced and discussed. By discussing the recent advances, future trends, and existing challenges of 2D materials and their optoelectronic devices, this review has provided an insight into the perspectives of 2D materials for optoelectronic integration and may guide the development of this field within the research community.

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Section: Synthesis and Optoelectronic Properties Of 2d Materials And ...mentioning

confidence: 99%

Perspectives of 2D Materials for Optoelectronic Integration

Zhao

Zhang

et al. 2021

Adv Funct Materials

123

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“…The second path is to sulfurize/selenize/tellurize the predeposited metal or metal oxide films on substrate. [114] Xu et al prepared a 1-1.5 nm thick Mo film on the Si/SiO 2 substrate via magnetron sputtering, and tellurized the Mo film at 620 °C with different growth times. 1T′ phase MoTe 2 was found to fully form at centimeter scale for the short growth time.…”

Section: Sulfurization/selenization/tellurization Of the Predeposited Thin Filmmentioning

confidence: 99%

“…[211,212] Predeposition of the precursor is another approach to offer a more uniform precursor supply. [114,145,152,213] In addition to the conventional thermal evaporation, electron beam deposition or magnetron sputtering, [125,[214][215][216][217] ALD affords atomic film thickness precision control of the deposited film, benefiting the following reaction with chalcogens. [117,[218][219][220] Tan et al used ALD to deposit MoCl 5 film and sulfurize it with H 2 S to generate 5.08 cm (2 in.)…”

Section: Layer Numbermentioning

confidence: 99%

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

Wang

Yang

2021

Adv Elect Materials

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When the timeline reached 2004, graphene, the single layer of graphite, was discovered through a scotch-tape exfoliation method and was found to have ultrahigh mobility. [25][26][27] Various 2D materials such as transition metal chalcogenides (TMCs), [28][29][30] boron nitrides (BNs), [31,32] black phosphorus, [33,34] and some new materials including Si, [35] Te, [36] and black arsenic-phosphorus [37] were subsequently synthesized, enabling the fabrication of numerous novel devices. The field of 2D materials is now making strong voice, which is no longer ignored by the scientific and technological community. [38][39][40] Among the various 2D materials, the TMCs constituted by the transition metal elements (M) and the chalcogen elements (X) are a large family. M can range from group 4B to group 10 in the periodic table, while X is S, Se, or Te. [41][42][43][44][45][46][47] Figure 1a exhibits the binary TMCs that have already been explored. This variation of composition of elements transfers to a wide range of properties ranging from insulators (e.g., HfS 2 ), [48,49] semiconductors (e.g., MoS 2 , WS 2 ), [50,51] semimetals (e.g., MoTe 2 , TiSe 2 ), [52,53] to metals (e.g., NbSe 2 , VS 2 ). [54][55][56] Furthermore, TMCs can form alloys in the formula such as WSe 2−x S x , with composition-tunable properties. [57][58][59] Unlike semimetallic graphene, semiconducting TMCs usually possess a bandgap. For example, MoS 2 exhibits a bandgap, transitioning from indirect bandgap to direct bandgap when it thins from bulk phase to monolayer (Figure 1b), boosting the photoluminescence (PL) efficiency. [51,[60][61][62] Additionally, inversion symmetry breaking and large spin-orbit interaction, resulting in two energetic degenerate but inequivalent valleys in the band structure of a TMC (Figure 1c), may lead to breakthroughs in valleytronics and spintronics. [63][64][65][66][67][68][69][70] A few TMCs (e.g., NbSe 2 , TaS 2 , VSe 2 ) have shown superconductivity, [71,72] charge density wave [73,74] and Mott transition (transition from metal to nonmetal). [75,76] In addition, some novel TMCs such as Fe 3 GeTe 2 display intrinsic magnetism with gate-tunable Curie points. [66,77] Semimetallic TMCs like WTe 2 show topological structures in the energy band, enabling the study on topological physics. [78,79] The rich intrinsic properties and superior tunability of TMCs hold great promise for all kinds of technologically important applications in electronics, optoelectronics, spintronics, valleytronics, etc. (Figure 1d). [51,[80][81][82][83][84][85][86][87][88][89][90][91] Due to numerous unique properties of 2D TMCs, devices such as transistors, photodetectors (PDs), and photodiodes based on 2D TMCs have been actively pursued. The ultimate destination of the miniaturization of the electronic devices will 2D transition metal chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number, composition, and inter...

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“…Various metals and nonmetals have been explored as growth substrates for the large-area preparation of 2D materials ( Qin et al., 2020 ). The representative substrates used for growing graphene and 2D hexagonal boron nitride ( h -BN) layers are Cu ( Kim et al., 2012 ; Li et al., 2009 ) and Ni ( Shi et al., 2010 ; Yu et al., 2008 ), while inert nonmetal substrates ( Wang et al., 2020 ) such as SiO 2 ( Lee et al., 2012b , 2013 ) and sapphire ( Lee et al., 2013 ) are widely used for 2D transition metal dichalcogenide (TMDC) growth. However, poor quality, low growth rate, and non-uniform structure of the obtained materials are still insurmountable problems in using these substrates.…”

Section: Introductionmentioning

confidence: 99%

Controllable growth of two-dimensional materials on noble metal substrates

2021

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Summary Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

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Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method

Cited by 40 publications

References 150 publications

Perspectives of 2D Materials for Optoelectronic Integration

Perspectives of 2D Materials for Optoelectronic Integration

Toward Wafer‐Scale Production of 2D Transition Metal Chalcogenides

Controllable growth of two-dimensional materials on noble metal substrates

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