Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water

Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors

“…The average oxygen/metal ratio is 2.4, which is much larger than that achieved for Cp 2 HfMe 2 . [51] No carbon impurities were detected in the HfO 2 films deposited using [(MeCp) 2 [51] and much closer to stoichiometry than reported for other mmp based hafnium complexes. [52,53] The crystallinity and growth habit of samples of HfO 2 thin films deposited by ALD and MOCVD were investigated using XRD.…”

The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source

“…Furthermore, it is the goal of the current work to investigate new processes that exploit water vapor as the oxygen source to avoid the potential drawbacks of ozone. Although ozone processes have been noted as providing improved film purity relative to ones using water, [46] ozone may promote the undesired formation of interfacial silicon oxide, which is problematic for high-k dielectric applications. [1] Herein, we describe the ALD growth of HfO 2 and ZrO 2 thin films from a series of new metallocene-based processes that exhibit the advantages above while using water vapor as the oxygen source.…”

“…Reported zirconocene-based ALD precursors include Cp 2 ZrCl 2 and Cp 2 ZrMe 2 using H 2 O and ozone as oxygen sources. [43][44][45] Hafnocene-based ALD precursors have included Cp 2 HfCl 2 and Cp 2 HfMe 2 using H 2 O and ozone as oxygen sources, [46,47] (MeCp) 2 HfMe 2 , Cp 2 Hf(OMe) 2 , (MeCp) 2 Hf(OMe)Me, and (CpMe) 2 Hf(OMe) 2 using ozone as the oxygen source, [48,49] [51] there remains continued incentive to explore related structures to provide a source compound with optimal properties, while affording the desired materials via a self-limiting mechanism. Furthermore, it is the goal of the current work to investigate new processes that exploit water vapor as the oxygen source to avoid the potential drawbacks of ozone.…”

Deposition of Lanthanum Zirconium Oxide High‐k Films by Liquid Injection ALD and MOCVD

“…This La atomic fraction is defined as the ratio La/(La + Zr) in the oxide film. The AES data for the MOCVD-grown films (see , [39] and so the pres- [40] […”