Controlled growth of large-area anisotropic ReS₂atomic layer and its photodetector application

Abstract

As an anisotropic 2D layered material, rhenium disulfide (ReS) has attracted much attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, the low lattice symmetry and interlayer decoupling of ReS make asymmetric growth and out-of-plane growth occur quite easily; therefore, thick flake, dendritic and flower-like structures of ReS have mostly been obtained previously. Here, we report on an approach based on space-confined epitaxial growth for the controlled synthesis of ReS films. Using this approach, large-area and high-quality ReS films with uniform monolayer thickness can grow on a mica substrate. Furthermore, the weak van der Waals interaction between the surface of mica and ReS clusters, which favors surface-confined growth while avoiding out-of-plane growth, is critical for growing ReS with uniform monolayer thickness. The morphological evolution of ReS with the growth temperature reveals that asymmetric growth can be suppressed at relatively low temperatures. A ReS field-effect transistor displayed a current on/off ratio of 10 and an electron mobility of up to 40 cm V s, with outstanding photoresponsivity of 12 A W. This work not only promotes the large-scale employment of ReS in high-performance optoelectronic devices, but also provides a means of controlling the unusual growth behavior of low-lattice-symmetry 2D layered materials.

Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications

“…In another study, large-area epitaxial growth of ReS2 on mica support at 500 to 800 o C was reported using ReO3 as a precursor of Re. [45] One critical disadvantage of these processes is using the highly corrosive hydrofluoric acid (HF) as an etchant to delaminate the ReS2 film from the mica substrate. To avoid halogen vapor transport, Bhattacharya et al proposed an alternative approach titled the 'Bridgman method'.…”

Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors

“…It is well known that the SiO 2 /Si substrate has a high energy barrier for atom migration due to the rough surface with abundant dangling bonds and defects, which leads to the occurrence of 3D growth. In contrast, the inert and flat surface of mica has a low energy barrier for atom migration, which together with the anisotropic structure of Sb 2 Se 3 favors its epitaxial growth into 1D NW.…”

Electronic and Optoelectronic Applications Based on ReS2

“…d) Transfer curves ( I ds − V g ) of the back‐gated ReS 2 FET at various values of V ds . Reproduced with permission . Copyright 2016, Royal Society of Chemistry.…”

“…In addition, the strong anisotropy due to low lattice symmetry endows ReS 2 with interesting characteristics. This indicates that ReS 2 has great potential for a wide range of applications, including anisotropic electronics, photodetectors, logic circuits, and sensors …”