Controlled growth of MoS2 by atomic layer deposition on patterned gold pads

Yue, Chenxi; Líu, Hao; Chen, Lin; Zhu, Hao; Sun, Qizhen

doi:10.1016/j.jcrysgro.2020.125683

Cited by 11 publications

(8 citation statements)

References 27 publications

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“…[118] However, this approach might suffer from difficulties in defect-free passivation similar to most of the existing area-selective ALD processes, [120,121] and would ideally still require hindering of vertical growth. Recently, first investigations into area-selective ALD of TMDCs based on both inherent material selectivity [122][123][124] and area-selective passivation [121,125] have been reported, although these studies have not focused on increasing the grain size. Nevertheless, it is clear that controlling nucleation and diffusion is a powerful approach to tailor growth of ALD TMDCs that should be further examined.…”

Section: Specialties In the Atomic Layer Deposition Of 2d Materialsmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Specialties In the Atomic Layer Deposition Of 2d Materialsmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…However, in recent years, many research groups have been actively developing various deposition methods for producing wafer‐scale MoS 2 films for practical applications. Among these deposition methods, the ALD process using various Mo precursors [ 11–28 ] is attractive because it comprises alternating precursor injections, and thus, the adsorption characteristics of each precursor can be independently controlled.…”

Section: Figurementioning

confidence: 99%

“…However, top‐down patterning processes are expensive, leading to high manufacturing cost; thus, a bottom‐up patterning scheme based on the selective deposition of TMDC films on a designated (predefined) region is of great interest. [ 28–34 ] Typically, area‐selective film deposition can be achieved by controlling the chemical reaction of the introduced precursor with a surface designed so that it either promotes or inhibits film growth depending on the implementation approach. For example, in the case of area‐selective MoS 2 deposition, the regions requiring MoS 2 growth are predefined with a MoO 3 [ 29,30 ] or an Au layer [ 28 ] or are pretreated using O 2 plasma.…”

Section: Figurementioning

confidence: 99%

“…[ 28–34 ] Typically, area‐selective film deposition can be achieved by controlling the chemical reaction of the introduced precursor with a surface designed so that it either promotes or inhibits film growth depending on the implementation approach. For example, in the case of area‐selective MoS 2 deposition, the regions requiring MoS 2 growth are predefined with a MoO 3 [ 29,30 ] or an Au layer [ 28 ] or are pretreated using O 2 plasma. [ 31–34 ] As a different approach, inhibition layers, such as a polymer film [ 33 ] and a graphene layer, [ 34 ] were investigated.…”

Section: Figurementioning

confidence: 99%

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Area‐Selective Atomic Layer Deposition of MoS₂ using Simultaneous Deposition and Etching Characteristics of MoCl₅

Ahn

Lee

Kim

et al. 2021

Physica Rapid Research Ltrs

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A novel selective atomic layer deposition (ALD) process for depositing MoS2 using MoCl5 and H2S precursors is proposed. On the surface of SiO2, the prolonged introduction of MoCl5 vapor by increasing the MoCl5 pulsing time rapidly suppresses the subsequent MoS2 growth due to the intense self‐etching effect of MoCl5, that is, the detachment of weakly bonded surface adsorbates (MoClx*). In contrast, the surface of Al allows more facile adsorption of MoCl5 than in the case of the SiO2 surface, and thus effectively compensates for the reduced deposition rate. By optimizing the MoCl5 pulsing time, the self‐aligned growth of MoS2 on predefined Al (5 nm) patterns (circular and letter patterns) on a SiO2 substrate with a negligible selectivity loss is demonstrated.

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“…The chemical reaction of the newly fabricated atomic film is directly determined by the previous layer, so only one layer of atoms can be deposited per ALD cycle [ 28 ]. During the ALD process, not only the thickness of the film can be precisely controlled, but the uniformity of the film on the substrate with complex morphology can also be well maintained [ 29 ]. In addition, because the manufacturing process is not sensitive to the amount of precursor, ALD has high repeatability.…”

Section: Introductionmentioning

confidence: 99%

MoS2 with Controlled Thickness for Electrocatalytic Hydrogen Evolution

Liu

2021

Nanoscale Res Lett

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Molybdenum disulfide (MoS2) has moderate hydrogen adsorption free energy, making it an excellent alternative to replace noble metals as hydrogen evolution reaction (HER) catalysts. The thickness of MoS2 can affect its energy band structure and interface engineering, which are the avenue way to adjust HER performance. In this work, MoS2 films with different thicknesses were directly grown on the glassy carbon (GC) substrate by atomic layer deposition (ALD). The thickness of the MoS2 films can be precisely controlled by regulating the number of ALD cycles. The prepared MoS2/GC was directly used as the HER catalyst without a binder. The experimental results show that MoS2 with 200-ALD cycles (the thickness of 14.9 nm) has the best HER performance. Excessive thickness of MoS2 films not only lead to the aggregation of dense MoS2 nanosheets, resulting in reduction of active sites, but also lead to the increase of electrical resistance, reducing the electron transfer rate. MoS2 grown layer by layer on the substrate by ALD technology also significantly improves the bonding force between MoS2 and the substrate, showing excellent HER stability.

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Controlled growth of MoS2 by atomic layer deposition on patterned gold pads

Cited by 11 publications

References 27 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Area‐Selective Atomic Layer Deposition of MoS₂ using Simultaneous Deposition and Etching Characteristics of MoCl₅

MoS2 with Controlled Thickness for Electrocatalytic Hydrogen Evolution

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Controlled growth of MoS2 by atomic layer deposition on patterned gold pads

Cited by 11 publications

References 27 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Area‐Selective Atomic Layer Deposition of MoS2 using Simultaneous Deposition and Etching Characteristics of MoCl5

MoS2 with Controlled Thickness for Electrocatalytic Hydrogen Evolution

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Area‐Selective Atomic Layer Deposition of MoS₂ using Simultaneous Deposition and Etching Characteristics of MoCl₅