Controlled growth of silicon nanowires synthesized via solid–liquid–solid mechanism

Wong, Yuen Yee; Yahaya, Muhammad; Salleh, Muhamad Mat; Majlis, B.Y.

doi:10.1016/j.stam.2005.02.011

Cited by 29 publications

(12 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The averaged diameter of the NWs does not change obviously as the annealing temperature increases from 1200 to 1250°C, whereas the NWs' density increases significantly. The results are well consistent with the results reported in our previous paper [12] as well as in other literatures [11,[15][16][17][18][19] with the same SLS approach by applying different catalysts and annealing gases.…”

Section: Fabrication Of Si Nwssupporting

confidence: 93%

“…Due to these unique properties and compatibility with traditional silicon technology, Si NWs have been demonstrated for a variety of applications, such as field-effect transistors, solar cells, integrated logic circuits, lithiumion batteries, thermoelectric devices, biosensors, and many others [3][4][5][6][7][8][9][10]. In the past decades, considerable efforts have been devoted to nanowire synthesis and a variety of methods have been established for growing Si and its oxide NWs [7][8][9][10][11][12][13][14][15][16][17][18][19]. Among these growth methods, solid-liquid-solid (SLS) growth is a relatively straightforward technique for producing Si NWs [11,12], because in SLS the silicon substrate itself serves as the silicon source, with no additional Si source needed like that in vapor-liquid-solid (VLS) growth [13,14].…”

Section: Introductionmentioning

confidence: 99%

“…Among these growth methods, solid-liquid-solid (SLS) growth is a relatively straightforward technique for producing Si NWs [11,12], because in SLS the silicon substrate itself serves as the silicon source, with no additional Si source needed like that in vapor-liquid-solid (VLS) growth [13,14]. However, the SLS-grown NWs are usually in a mess of curved wires and typically have thick oxide shells or incorporate nonstoichiometric amounts of oxygen [11,12,[15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Wu¹,

Shao²,

Nie³

et al. 2016

Nano Online

View full text Add to dashboard Cite

Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40-200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas has significant impacts on the microstructure of the NWs. By increasing the hydrogen ratio in the forming gas, straight and crystal Si NWs with thin oxide shells are obtained. Both the conductive properties along and perpendicular to the NW are investigated by conductive atomic force microscopy (CAFM) on single NWs. The conductance perpendicular to the NW is too poor to be detected, while a weak conductance can be measured along the NW. The results indicate that the measured resistance mainly comes from the contact(s), and the Si NWs exhibit typical semiconductive conductance themselves, which should have potential applications in nanoelectronics.

show abstract

Section: Fabrication Of Si Nwssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Wu¹,

Shao²,

Nie³

et al. 2016

Nano Online

View full text Add to dashboard Cite

show abstract

“…Variants of the basic chemical vapour deposition (CVD) VLS principle generate the precursor gaseous Si by laser ablation (Morales, 1998), plasma generation (Hofmann et al , 2003), and molecular beam epitaxy (Liu et al , 1999). Other strategies employ Si precursor in solution (Heitsch et al , 2008;Holmes, 2000) or in solid (Wong et al , 2005) form. These alternatives were developed to address specifi c requirements such as growth temperature, integration, uniformity and doping, but share the same underlying formation/ growth principle of VLS.…”

Section: Vapour-liquid-solid (Vls) Growth Of Nanoneedlesmentioning

confidence: 99%

Silicon nanoneedles for drug delivery

Chiappini

Almeida

2014

Semiconducting Silicon Nanowires for Biomedical Applications

View full text Add to dashboard Cite

“…2-14 depictes the growth process. directly using Si wafer as the Si source and adopting Au, [126,127] Pt/Au, [128] NiO, [32] Fe, [33] [32] and <110>, [34] and <112> oriented, [130] Si nanowire has been reported in the growth. The comprehensive understanding of the mechanisms is still the main challenge, including the growth orientations, cross section, the lattice structure, the controlling of the size and growth orientations.…”

Section: Thermal Annealingmentioning

confidence: 99%

Growth mechanism of silicon nanowires from nickel-coated silicon wafer

Li¹

View full text Add to dashboard Cite

Crystalline silicon (Si) nanowires are important building blocks in devices of photonics, quantum-dots, optoelectronics, and energy. Thermal annealing of metalcovered Si wafers gives rise to clean Si nanowires without metallic catalyst at the tip. The process does not need flammable or toxic gases. However, the growth mechanism is yet elucidated. This project grows Si nanowires by adopting the thermal annealing method: nickel (Ni) is sputtered on Si wafers as catalyst and thereafter a layer of carbon is sputtered to protect Si nanowires from oxidation during thermal annealing. Careful studies via transmission electron microscopy and selected area electron diffraction patterns elucidate the growth process and the relationship between the seeding Ni particle and the grown Si nanowire. The seeding Ni particles are embedded in the Ni-Si-O nanoclusters that are connected with the grown Si nanowires at the end of the nanowire growth. The growth orientation of Ni-seeded Si nanowires is not dictated by surface energy of the various nanocrystal planes, but follows specific structure sensitive principle with the seeding Ni nanoparticles to minimize the mismatch in lattice spacing and dihedral angle at the wire/particle interface. It is inferred that the growth orientation of Si nanowires is determined by the ordered planes of the Ni catalyst particle at the wire/particle interface. The various morphologies of the nanowires are controlled by the diameter and vibration of the Ni-Si-O droplet, the distribution of the Ni-Si, Ni-Si-O y (y≈1) and Ni-Si-O x (x≈2) phases, and the supersaturated content in the Ni-Si-O droplet. III ACKNOWLEDGEMENT I wish to deliver my most sincere and deepest gratitude to my supervisor Prof. Sam Zhang Shanyong for his effective academic advisory, continuous guidance and endless patience. Without his encouragement and care, I can't finish this tough work. I owe sincere thanks to Ms. Guo Jun and Mr. Kong Junhua from School of Material Science Engineering for their characterization assistance and constructive suggestions. Sincere thanks to all the researchers in Prof. Sam Zhang's group for their helpful discussions, suggestions and timely assistance.

show abstract

Controlled growth of silicon nanowires synthesized via solid–liquid–solid mechanism

Cited by 29 publications

References 9 publications

Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Fabrication of Straight Silicon Nanowires and Their Conductive Properties

Silicon nanoneedles for drug delivery

Growth mechanism of silicon nanowires from nickel-coated silicon wafer

Contact Info

Product

Resources

About