Controlled n-type doping of antimonide/arsenide heterostructures using GaTe

Bennett, B. R.; Magno, R.; Ikossi, K.; Papanicolaou, N.; Boos, J. B.; Shanabrook, B. V.

doi:10.1109/mbe.2002.1037820

Cited by 2 publications

(2 citation statements)

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“…The high carrier concentration estimated from simulation fits very well with the value of 3.3 × 10 19 cm −3 and 2.3 × 10 19 cm −3 determined from other surface analytical techniques x-ray photoelectron spectroscopy (XPS) and ultra violet photoelectron spectroscopy (UPS), respectively [37]. Further, the value of carrier concentration also in excellent agreement with those reported earlier by Bennet et al [38]. on GaAs and GaSb thin films at this GaTe cell temperature.…”

Section: Ensemble Nw Photodetectorsupporting

confidence: 89%

A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector

Devkota

Parakh²,

Johnson³

et al. 2020

Nanotechnology

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This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell temperature variation (TGaTe) on the morphological, optical, and electrical properties of doped-GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxy (MBE). These studies led to an optimum doping temperature of 550 °C for the growth of tellurium (Te)-doped GaAsSb NWs with the best optoelectronic and structural properties. Te incorporation resulted in a decrease in the aspect ratio of the NWs causing an increase in the Raman longitudinal optical/transverse optical vibrational mode intensity ratio, large photoluminescence emission with an exponential decay tail on the high energy side, promoting tunnel-assisted current conduction in ensemble NWs and significant photocurrent enhancement in the single nanowire. A Schottky barrier photodetector (PD) using Te-doped ensemble NWs with broad spectral range and a longer wavelength cutoff at ∼1.2 µm was demonstrated. These PDs exhibited responsivity in the range of 580–620 A W−1 and detectivity of 1.2–3.8 × 1012 Jones. The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.

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Section: Ensemble Nw Photodetectorsupporting

confidence: 89%

A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector

Devkota

Parakh²,

Johnson³

et al. 2020

Nanotechnology

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“…The phonon-limited mobility of graphene on SiO 2 compares favorably to that of InAs and InSb high elec-tron mobility transistors, for which the highest mobilities achieved in actual devices are ~30,000-40,000 cm 2 /Vs. 54 The on/off resistivity ratio of graphene FETs is only ~100:1 in the best devices, but this is suitable for analog device applications.…”

Section: Graphene Electronics Gapless Analog Devicesmentioning

confidence: 99%

Graphene: Materially Better Carbon

Fuhrer¹,

Lau

MacDonald³

2010

MRS Bull.

208

145

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Graphene, a single atom–thick plane of carbon atoms arranged in a honeycomb lattice, has captivated the attention of physicists, materials scientists, and engineers alike over the five years following its experimental isolation. Graphene is a fundamentally new type of electronic material whose electrons are strictly confined to a two-dimensional plane and exhibit properties akin to those of ultrarelativistic particles. Graphene's two-dimensional form suggests compatibility with conventional wafer processing technology. Extraordinary physical properties, including exceedingly high charge carrier mobility, current-carrying capacity, mechanical strength, and thermal conductivity, make it an enticing candidate for new electronic technologies both within and beyond complementary metal oxide semiconductors (CMOS). Immediate graphene applications include high-speed analog electronics and highly conductive, flexible, transparent thin films for displays and optoelectronics. Currently, much graphene research is focused on generating and tuning a bandgap and on novel device structures that exploit graphene's extraordinary electrical, optical, and mechanical properties.

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Controlled n-type doping of antimonide/arsenide heterostructures using GaTe

Cited by 2 publications

References 1 publication

A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector

A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector

Graphene: Materially Better Carbon

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