Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy

Ptak, Aaron J.; Holbert, L. J.; Liu, Ting; Swartz, C. H.; Moldovan, M.; Giles, N. C.; Myers, T. H.; Lierde, P. Van; Tian, Chunsheng; Hockett, R. A.; Mitha, S.; Wickenden, A. E.; Koleske, Daniel; Henry, Ralph

doi:10.1063/1.1403276

Cited by 67 publications

(61 citation statements)

References 10 publications

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“…The energy depth of oxygen donor was assumed to be E DD = 0.03 eV as previously reported by other groups. 11,13 The best fitting results by using two types of unintentional donors are shown in Fig. 6͑a͒.…”

Section: B I-v Analysis Including Oxygen Shallow Donorsmentioning

confidence: 99%

“…Since the oxygen atom occupies the nitrogen site so as to serve as a substitutional shallow donor, 11,13 the out diffusion of oxygen implies a corresponding increase of the density of the V N defect. However, our result of theoretical fitting to experiments indicated that the density of the V N defect slightly reduced after annealing.…”

Section: Effect Of Surface Control Process On I-v Characteristics mentioning

confidence: 99%

“…However, more recent experimental and theoretical investigations on the role of oxygen impurity in GaN and AlGaN have indicated that it is a shallow donor with an activation energy of about 30 meV. 11,13 Furthermore, it has been suggested that the oxygen donor is the residual donor responsible for the n-type conduction of undoped GaN and AlGaN. 14,15 On the other hand, a key issue related to device processing is the understanding and control of the surfaces and interfaces of GaN and AlGaN.…”

Section: Introductionmentioning

confidence: 99%

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Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Kotani

Kaneko

Hasegawa

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Leakage currents in AlGaN Schottky diodes were investigated systematically by using a rigorous computer simulation based on the thin surface barrier model taking account of unintentionally doped surface donors. The leakage currents in AlGaN Schottky diodes have stronger bias dependence and smaller temperature dependences as compared with those of GaN diodes. It was shown that these features were associated with shallow oxygen donors located near the AlGaN surface. Then, an attempt was made to remove oxygen and suppress leakage currents by a surface control process using an ultrathin Al layer and subsequent annealing. An in situ x-ray photoelectron spectroscopy analysis indicated the formation of Al 2 O 3 layer during the surface control process, suggesting efficient gettering of oxygen from the surface. C-V analysis directly indicated the reduction of shallow donors by the surface control process. A remarkable reduction of reverse leakage currents of four to five orders of magnitude took place in large area AlGaN Schottky diodes after the application of the surface control process. This process also reduced leakage currents of the gate of the heterostructure field effect transistor device by more than one order of magnitude and increased temperature dependences of current.

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Section: B I-v Analysis Including Oxygen Shallow Donorsmentioning

confidence: 99%

Section: Effect Of Surface Control Process On I-v Characteristics mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Kotani

Kaneko

Hasegawa

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…With the exception of the substrate interface region [3], very low background carrier concentrations can now be achieved, by implementing appropriate purifying techniques. Experiments with intentional oxygen doping have also been performed, to study the donor properties, and to explore oxygen as a possible alternative to Si for n-type doping [4][5][6][7].…”

mentioning

confidence: 99%

Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition

Heikman¹,

Keller

DenBaars

et al. 2003

phys. stat. sol. (c)

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One of the most challenging tasks encountered in developing highly efficient electro‐optic (EO) devices is to find a material system that possesses all desirable properties such as large EO coefficients, good thermal and mechanical stability, and low optical loss. In order to meet this stringent requirement, we have developed a series of crosslinkable EO dendrimers using the standardized AJL8‐type chromophore as the center core and the furyl‐ and anthryl‐containing dendrons as the periphery. Upon adding a trismaleimide (TMI) dienophile, these dendrimers could be in‐situ crosslinked via the Diels–Alder cycloaddition and efficiently poled under a high electric field. Through this dynamic process, the spatially voided and π‐electron‐rich surrounding of the chromophore core changes into a dense and more aliphatic network, with the dipolar chromophore embedded and aligned inside. The resultant materials exhibit large EO coefficients (63–99 pm V–1 at 1.31 μm), excellent temporal stability (the original r33 values remain unchanged at 100 °C for more than 500 h), and blue‐shifted near‐IR absorption. With these combined desirable properties, a poled EOD2/TMI film could be processed through multiple lithographic and etching steps to fabricate a racetrack‐shaped micro‐ring resonator. By coupling this ring resonator with a side‐polished optical fiber, a novel broadband electric‐field sensor with high sensitivity of 100 mV m–1 at 550 MHz was successfully demonstrated.

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“…In the previous study, the species of potential contaminants exist in gaseous sources and their effects on the properties of the epitaxial GaN layer had been discussed. Oxygen, carbon and hydrogen as main unintentional impurity elements were researched [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] . These unintentionally elements in GaN layers could act as donor or acceptor dopants, which may effect the crystal quality, carrier density, carrier mobility and emission efficiency.…”

Section: Introductionmentioning

confidence: 99%

Effect of H2O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

Ohkawa

Wang

2017

AOPC 2017: Optoelectronics and Micro/Nano-Optics

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Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy

Abstract: On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy

Cited by 67 publications

References 10 publications

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism

Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition

Effect of H2O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

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