Controlled, Reversible, and Nondestructive Generation of Uniaxial Extreme Strains (&gt;10%) in Graphene

Garza, Héctor Hugo Pérez; Kievit, Eric Walter; Schneider, Grégory F.; Staufer, U.

doi:10.1021/nl5016848

Cited by 113 publications

(69 citation statements)

References 43 publications

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“…For example, the uniaxial and biaxial strains larger than 10% have been achieved experimentally in graphene2930. Our simulations have demonstrated that the ultrathin GaAs film considered in this work can sustain high tensile strain (>10%) without the appearance of structural transition and bond breakage.…”

Section: Discussionmentioning

confidence: 52%

Driving a GaAs film to a large-gap topological insulator by tensile strain

Zhao

Chen

et al. 2015

Sci Rep

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Search for materials with a large nontrivial band gap is quite crucial for the realization of the devices using quantum spin Hall (QSH) effects. From first-principles calculations combined with a tight-binding (TB) model, we demonstrate that a trivial GaAs film with atomic thickness can be driven to a topological insulator with a sizable band gap by tensile strain. The strain-induced band inversion is responsible for the electronic structure transition. The nontrivial band gap due to spin-orbital coupling (SOC) is about 257 meV, sufficiently larger for the realization of QSH states at room temperature. This work suggests a possible route to the fabrication of QSH-based devices using the well-developed GaAs technology.

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Section: Discussionmentioning

confidence: 52%

Driving a GaAs film to a large-gap topological insulator by tensile strain

Zhao

Chen

et al. 2015

Sci Rep

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“…13,21 Studies of the effect of biaxial strain on graphene are typically performed in the range 0.1%-1% of strain, 14,22-27 while uniaxial strain above 10% was reported. 28 Only one study 29 claims to achieve biaxial strains up to 20%. However, the corresponding Raman spectra show a shift of the 2D peak of just 10-20 cm -1 , which does not appear compatible with such a large strain.…”

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confidence: 99%

Raman spectroscopy of highly pressurized graphene membranes

Shin

Lozada-Hidalgo

Sambricio

et al. 2016

Applied Physics Letters

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Raman spectroscopy is an ideal tool for the characterization of strained graphene. Biaxial strain, in particular, allows for more reliable calculation of the Grüneisen parameters than uniaxial strain. However, the application of biaxial strain is rather difficult to achieve experimentally, so all previous studies reported on graphene subjected to relatively small biaxial strains (0.1%–1%), in contrast to uniaxial strain above 10%. Here, we report a simple fabrication technique to produce pressurized and stable graphene membranes that can support differential pressures up to 14 bar, corresponding to a reversible strain up to ∼2%. We find that the Grüneisen parameters remain constant even for the largest strains achieved, in agreement with the theoretical predictions. However, for strains above 1%, a distinctive broadening of both the G and 2D peaks was observed for biaxial strain. We attribute this to the nanoscale variations of strain in the membrane within an area comparable with the laser spot size.

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“…25 alternative promising approach consists in anchoring graphene layers to micro-electromechanical actuators. 27 More elaborated strain profiles, in particular those giving rise to a pseudomagnetic field, have been hard to demonstrate so far. Interesting experimental evidence has been put forward in the context of random nanobubbles 10 and fascinating results have been obtained in deformed artificial honeycomb structures mimicking the behavior of graphene.…”

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confidence: 99%

Anisotropic straining of graphene using micropatterned SiN membranes

et al. 2016

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We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load ∆P over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain ε we observe is estimated to be ≈ 0.7% for ∆P = 1 bar in graphene clamped to elliptical SiN holes with axis 40 and 20 µm. In the same configuration, we report a G± splitting of 10 cm −1 which is in good agreement with the calculated anisotropy ∆ε ≈ 0.6% for our device geometry. Our results are consistent with the most recent reports on the Grüneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clamping conditions are discussed.

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Controlled, Reversible, and Nondestructive Generation of Uniaxial Extreme Strains (>10%) in Graphene

Cited by 113 publications

References 43 publications

Driving a GaAs film to a large-gap topological insulator by tensile strain

Driving a GaAs film to a large-gap topological insulator by tensile strain

Raman spectroscopy of highly pressurized graphene membranes

Anisotropic straining of graphene using micropatterned SiN membranes

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