Controlled SOI nanopatterning for GaN pendeo-epitaxy

Mrad, Mrad; Baril, Kilian; Charles, Matthew; Perez, J. Zuniga; Labau, S.; Panabière, M.; Petit-Etienne, C.; Alloing, Blandine; Lefèvre, Gauthier; Dupré, Ludovic; Feuillet, G.; Gourgon, C.

doi:10.1016/j.mne.2022.100110

Cited by 4 publications

(2 citation statements)

References 17 publications

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“…The base substrate is Si(100), allowing us to perform diffraction only on the top Si layers, which display a different crystallographic orientation. The etching process of these 100 nm diameter nano-pillars has been previously explained in detail by Mrad et al (2022). The next step for fabricating GaN platelets is the growth of GaN pyramids on top of these nanopillars by metal organic vapor phase epitaxy, with trimethylgallium (TMGa) and ammonia (NH 3 ) as precursors for gallium and nitrogen, respectively.…”

Section: Sample Descriptionmentioning

confidence: 99%

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Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

Wehbe

Charles

Baril³

et al. 2023

J Appl Crystallogr

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This work illustrates the potential of dark-field X-ray microscopy (DFXM), a 3D imaging technique of nanostructures, in characterizing novel epitaxial structures of gallium nitride (GaN) on top of GaN/AlN/Si/SiO2 nano-pillars for optoelectronic applications. The nano-pillars are intended to allow independent GaN nanostructures to coalesce into a highly oriented film due to the SiO2 layer becoming soft at the GaN growth temperature. DFXM is demonstrated on different types of samples at the nanoscale and the results show that extremely well oriented lines of GaN (standard deviation of 0.04°) as well as highly oriented material for zones up to 10 × 10 µm2 in area are achieved with this growth approach. At a macroscale, high-intensity X-ray diffraction is used to show that the coalescence of GaN pyramids causes misorientation of the silicon in the nano-pillars, implying that the growth occurs as intended (i.e. that pillars rotate during coalescence). These two diffraction methods demonstrate the great promise of this growth approach for micro-displays and micro-LEDs, which require small islands of high-quality GaN material, and offer a new way to enrich the fundamental understanding of optoelectronically relevant materials at the highest spatial resolution.

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Section: Sample Descriptionmentioning

confidence: 99%

“…Some platelets in Fig. 1(d) (bottom) are damaged due to a problem in the pillar fabrication process, and this is the subject of additional research to improve and optimize the pillar etching (Mrad et al, 2022). Therefore, all measurements in this work were performed only on the good-quality GaN platelets.…”

Section: Sample Descriptionmentioning

confidence: 99%

Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

Wehbe

Charles

Baril³

et al. 2023

J Appl Crystallogr

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Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based µLEDs

Labchir,

Hammami,

Baril

et al. 2024

Adv Materials Technologies

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The mass production of µLEDs requires an upscaling approach on 200 mm wafers, which implies the deployment of a technology that achieves zero defectivity without liftoff. In this report, Nanoimprint lithography (NIL) processing is successfully optimized for nanostructuring GaN‐based Silicon‐On‐Insulator (SOI) substrates. The etching of SiO2/GaN/AlN/Si/SiO2 layers using different plasmas is conducted and multi‐layer nanopillars 100–200 mm in diameter are fabricated. This approach generates zero‐defect arrays of pillars, which is particularly advantageous for the growth process. In addition, the SiO2 at the bottom of the pillar allows it to twist during the subsequent GaN regrowth, as this layer becomes soft at the growth temperature >1000 °C. This ability to deform enables a coalescence of pillars into layers with reduced dislocation density. As a result, high‐quality GaN microplatelets and µLEDs are grown via a bottom‐up approach based on pendeoepitaxy using metal–organic vapor phase epitaxy (MOVPE). The fabricated µLEDs have a very smooth surface with a roughness of 0.6 nm which facilitated the implementation of an easy and simple transfer protocol. Adhesive tape and metalmetal bonding, are used to bond the µLEDs onto a metal‐coated silicon substrate. The reported findings offer exciting new insights into the development of high‐performance displays.

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High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

Baril

Coulon

Charles

et al. 2023

Journal of Applied Physics

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In this paper, we report the use of three pendeo-epitaxy growth approaches as a way of reducing the threading dislocation density (TDD) of 20 × 20 μm2 GaN platelets to be used for the development of micro light-emitting diodes (μLEDs). The method relies on the coalescence of GaN crystallites grown on top of a network of deformable pillars etched into a silicon-on-insulator substrate. Our approach takes advantage of the creeping properties of SiO2 at the usual GaN epitaxial growth temperature, allowing the GaN crystallites to align and reduce the grain boundary dislocations. Furthermore, this bottom-up approach allows to get rid of the dry plasma etching step for μLEDs fabrication, which highly deteriorates sidewalls, reducing the efficiency of future displays. By optimizing the growth conditions and inducing asymmetric nucleation, a TDD of 2.5 × 108 cm−2 has been achieved on the GaN platelets, while keeping a smooth surface.

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Controlled SOI nanopatterning for GaN pendeo-epitaxy

Cited by 4 publications

References 17 publications

Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based µLEDs

High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes

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