Controlled solder interdiffusion for high power semiconductor laser diode die bonding

Merritt, Scott A.; Heim, P.J.S.; Cho, Si Hyung; Dagenais, M.

doi:10.1109/96.575565

Cited by 30 publications

(12 citation statements)

References 12 publications

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“…Thus, the aim of packaging is to dissipate heat efficiently in order to operate the LD at maximum optical performance without exceeding the permitted device temperature. Although various bonding techniques [4][5][6] have been proposed, comparison of optical, electrical and thermal performances of LDs under different bonding configurations was not widely reported. In our previous work, an optimized face-down bonding technique was developed for single-mode ridge-waveguide LDs [7].…”

Section: Introductionmentioning

confidence: 99%

Parametric investigation of laser diode bonding using eutectic AuSn solder

Teo

Ling

et al. 2007

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Parametric investigation of laser diode bonding using eutectic AuSn solder

Teo

Ling

et al. 2007

Thin Solid Films

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“…A bumping technology on a Si-wafer is an important issue to obtain high productivity of the flip-chip. Several methods for solder bumping have been introduced, such as paste [3], ball [4], electroplating [5], and vapor deposition [6].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, it may have a difficulty to achieve height uniformity of the bump due to misprinting. The vapor deposition method is regarded as a clean one, but it has a demerit of higher price Manuscript due to the vacuum process and of very careful control [6]. The ball bumping method can be performed by fluxed or nonfluxed processes such as ultrasonic [7] or plasma [4], but it also has disadvantages of relatively big size, higher price, and troublesome mounting of a tiny ball.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Sn–Cu Solder Bump Formed by Electroplating for Flip Chip

Jung

Zhou

2006

IEEE Trans. Electron. Packag. Manufact.

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Sn-Cu near eutectic solder bump was fabricated by electroplating for flip-chip, and its electroplating and bump characteristics were studied. A Si-wafer was used as a substrate and the under bump metallization (UBM) comprised 400 nm of Al, 300 nm of Cu, 400 nm of Ni, and 20 nm of Au sequentially from bottom to the top of the metallization. The electrolyte for plating Sn-Cu solder consisted of Sn +2 (concentration of 30 g/L) and Cu +2 (0.3 g/L) solutions with methasulfonic acid and deionized water. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 min with increasing current density from 1 to 8 A/dm 2 . In this range of current density, the plated Sn-Cu maintained its composition nearly constant level as Sn-(0.9 1.4)wt% Cu. The solder bump of typical mushroom shape with 120-m stem diameter and 75-m height was formed by plating at 5 A/dm 2 for 2 h. The mushroom bump changed its shape to the hemispherical type of 140-m diameter by air reflow on a hot plate at 260 C. The homogeneity of element distribution in the solder bump was examined, and Sn content in the mushroom bump appears to be uneven changed to more uniform after the air reflow. The highest shear bond strength of the Sn-Cu hemispherical bump showed 113 gf by reflowing at 260 C for 10 s.

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“…High power semiconductor laser diodes and optical amplifiers play important roles in solid state laser and optical fiber pumping, optical storage and recording, and can serve as efficient sources for medical and display applications [1]. The performance of the laser is highly dependent upon the temperature of the active region.…”

Section: Introductionmentioning

confidence: 99%