Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells

Tang, Rong; Chen, Xingye; Luo, Yong; Chen, Zihang; Liu, Yike; Li, Yingfen; Su, Zhenghua; Zhang, Xianghua; Fan, Ping; Liang, Guangxing

doi:10.3390/nano10030574

Cited by 18 publications

(6 citation statements)

References 27 publications

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“…Notably, the power conversion efficiency (PCE) of the Sb 2 Se 3 solar cells has had a very rapid evolution within only 7 years, reaching 9.2% in 2019 based on the core–shell nanorod configuration [ 8 ]. This is ascribed to a series of excellent properties of this binary material, including a narrow band gap (1.1–1.3 eV), high absorption coefficient (>10 5 cm −1 ) and fast carrier transport along the [001] orientation [ 5 , 8 , 9 , 10 , 11 ]. Moreover, the simple composition and the only stable phase in this binary system minimize the risk of impurity phase during thin film preparation.…”

Section: Introductionmentioning

confidence: 99%

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

et al. 2020

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Antimony selenide (Sb2Se3) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (Voc) limits the power conversion efficiency (PCE) of Sb2Se3-based cells, largely due to the low-charge carrier density. Herein, high-quality n-type (Tellurium) Te-doped Sb2Se3 thin films were successfully prepared using a homemade target via magnetron sputtering. The Te atoms were expected to be inserted in the spacing of (Sb4Se6)n ribbons based on increased lattice parameters in this study. Moreover, the thin film was found to possess a narrow and direct band gap of approximately 1.27 eV, appropriate for harvesting the solar energy. It was found that the photoelectric performance is related to not only the quality of films but also the preferred growth orientation. The Te-Sb2Se3 film annealed at 325 °C showed a maximum photocurrent density of 1.91 mA/cm2 with a light intensity of 10.5 mW/cm2 at a bias of 1.4 V. The fast response and recovery speed confirms the great potential of these films as excellent photodetectors.

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Section: Introductionmentioning

confidence: 99%

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

et al. 2020

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“…By optimizing the selenization of the Sb precursors, solar cells in substrate configuration (Mo/Sb 2 Se 3 /CdS/ITO/Ag) with a high fill factor (FF) of about 59.3% and an efficiency above 6.11% were obtained [184]. Depositing directly Sb 2 Se 3 film by the SP technique in a substrate configuration solar cell (Mo/Sb 2 Se 3 /CdS/ITO/Ag), with a fine tuning of the Ar working pressure during the deposition process and performing an optimized heat treatment in a controlled Se atmosphere, led to an interesting PCE of 5.52% [185].…”

Section: Close-spaced Sublimation (Css)mentioning

confidence: 99%

A Review on the Fundamental Properties of Sb2Se3-Based Thin Film Solar Cells

Bosio,

Foti,

Pasini

et al. 2023

Energies

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There has been a recent surge in interest toward thin film-based solar cells, specifically new absorber materials composed by Earth-abundant and non-toxic elements. Among these materials, antimony selenide (Sb2Se3) is a good candidate due to its peculiar properties, such as an appropriate bandgap that promises a theoretical maximum power conversion efficiency of 33% and an absorption coefficient of around 105 cm−1, enabling its use as a thin film absorber layer. However, charge carrier transport has been revealed to be problematic due to its cumbersome structure and the lack of a doping strategy. In this work, we aim to provide a clear picture of the state-of-the-art regarding research on Sb2Se3-based solar cells and its prospects, from the successful achievements to the challenges that are still to be overcome. We also report on the key parameters of antimony selenide with a close focus on the different characteristics associated with films grown from different techniques.

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“…Tang et al in 2020 212 investigated the influence of the sputtering process, working pressure (0.1−2.0 Pa), and postselenization on the Sb 2 Se 3 device performance. In order to study the effect of mixed working pressure, the bottom Sb 2 Se 3 layer was sputter-deposited under a working pressure of 1.5 Pa for 20 min to sputter the bottom layer; then the top layer was deposited under a decreased pressure of 1.0 Pa for 70 min.…”

Section: T H Imentioning

confidence: 99%

Present Status and Future Perspective of Antimony Chalcogenide (Sb₂X₃) Photovoltaics

Barthwal

Kumar

Pathak

2022

ACS Appl. Energy Mater.

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Their unique quasi one-dimensional (Q1D) crystal structure and rapid power conversion efficiency (PCE) evolution evoke tremendous scientific and technological interest in antimony chalcogenide (Sb2X3, X = S, Se, or S x Se1–x ) photovoltaics (PVs). Solution processability, strong photon harvesting, readily tunable optoelectronic properties, exceptional physicochemical stability, nontoxicity, and earth-abundance are their key features, endorsing Sb2X3 as next-generation PVs. Benign, self-healing grain boundaries and defect-tolerance add to their merits, empowering Sb2X3 films to act like pseudo-single crystals. These semiconductors are born for flexible PVs, as their Q1D crystal structures aid ultrahigh flexibility and bending tolerance. Sb2X3 solar cells are efficient in recycling indoor and ambient light; thus, they are promising as indoor PVs (IPVs). Sb2X3 PVs exhibit potential to simultaneously solve the stability and toxicity issues faced by lead halide perovskite PVs and the cost issues faced by mainstream silicon PVs. Presently, a record certified PCE of 10.7% has been demonstrated by Sb2X3 solar cells; thus, they are emerging as a promising low-cost alternative to the commercially available PV technologies. This review presents a unique perspective of the fundamentals, recent breakthroughs, challenges, and futuristic developments in this field, offering a fundamental guideline for the rational engineering, design, and fabrication of high-PCE Sb2X3 solar cells. This review highlights Sb2X3 based, large area, tandem, and flexible solar cells and explores the commercial viability of this technology from generic power production to niche markets.

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Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells

Cited by 18 publications

References 27 publications

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

A Review on the Fundamental Properties of Sb2Se3-Based Thin Film Solar Cells

Present Status and Future Perspective of Antimony Chalcogenide (Sb₂X₃) Photovoltaics

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Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells

Cited by 18 publications

References 27 publications

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

A Review on the Fundamental Properties of Sb2Se3-Based Thin Film Solar Cells

Present Status and Future Perspective of Antimony Chalcogenide (Sb2X3) Photovoltaics

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Present Status and Future Perspective of Antimony Chalcogenide (Sb₂X₃) Photovoltaics