Controlled substitution of S by Se in reactively sputtered CZTSSe thin films for solar cells

Singh, Om Pal; Vijayan, N.; Sood, K.N.; Singh, Bheem; Singh, Vidya Nand

doi:10.1016/j.jallcom.2015.06.276

Cited by 47 publications

(16 citation statements)

References 41 publications

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“…). This indicates the changes of bondings between atoms (Table ) because of the difference in atomic size between Se and S , and a shrinkage in the crystal structure (Fig. b).…”

Section: Resultsmentioning

confidence: 96%

Improvement of thermoelectric performance of α-In₂Se₃upon S incorporation

Song

Liu

et al. 2015

Phys. Status Solidi A

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In this work, we have observed the enhancement of carrier concentration in a-In 2 Se 3 at a specific S content. This enhancement results from avoiding the annihilation of defects, such as V In and interstitial In i acting as donors, via the rearrangement of both the cationic and anionic disorders. Therefore, there is a remarkable improvement in electrical conductivity (s). For example, the sample a-In 2 S 0.05 Se 2.95 perpendicular to the pressing direction (C ┴ ) gives the highest s value of 5.56 Â 10 3 V À1 m À1 at 923 K, while the virgin aIn 2 Se 3 gives only 9.17 Â 10 2 V À1 m À1 . In addition, there are dual effects on the lattice thermal conductivity (k L ) resulting from the stabilization of the lattice structure caused by the rearrangement of defect disorder and the lattice distortion from the formation of defect S Se . Therefore, the lattice contribution (k L ) in S-incorporated a-In 2 Se 3 remains relatively high at high temperatures. As a consequence, we have improved the thermoelectric performance, achieving a ZT value of 0.67 for a-In 2 S 0.05 Se 2.95 at 923 K, which is about 2.8 times that of virgin a-In 2 Se 3 (ZT ¼ 0.24 at C ┴ ).

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“…). This indicates the changes of bondings between atoms (Table ) because of the difference in atomic size between Se and S , and a shrinkage in the crystal structure (Fig. b).…”

Section: Resultsmentioning

confidence: 96%

Improvement of thermoelectric performance of α-In₂Se₃upon S incorporation

Song

Liu

et al. 2015

Phys. Status Solidi A

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“…1c). In addition, the presence of the tensile stress along with the lattice structure dilation is closely related to the creation of the extra conductive paths in the framework and favor the large DOS in both the valence and conduction bands 10,32 . Therefore, the carrier concentration increases.…”

Section: Resultsmentioning

confidence: 99%

Improved thermoelectric performance of solid solution Cu4Sn7.5S16 through isoelectronic substitution of Se for S

Cui

Han

et al. 2018

Sci Rep

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Cu-Sn-S family of compounds have been considered as very competitive thermoelectric candidates in recent years due to their abundance and eco-friendliness. The first-principles calculation reveals that the density of states (DOS) increases in the vicinity of the Fermi level (Ef) upon an incorporation of Se in the Cu4Sn7.5S16−xSex (x = 0–2.0) system, which indicates the occurrence of resonant states. Besides, the formation of Cu(Sn)-Se network upon the occupation of Se in S site reduces the Debye temperature from 395 K for Cu4Sn7S16 (x = 0) to 180.8 K for Cu4Sn7.5S16−xSex (x = 1.0). Although the point defects mainly impact the phonon scattering, an electron-phonon interaction also bears significance in the increase in phonon scattering and the further reducion of lattice thermal conductivity at high temperatures. As a consequence, the resultant TE figure of merit (ZT) reaches 0.5 at 873 K, which is 25% higher compared to 0.4 for Cu4Sn7.5S16.

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“…Up to now, many researches have focused on improving the quality of CZTSSe absorption layer, i.e., optimizing the synthesis method, adjusting element composition of CZTSSe precursor solution, or controlling the annealing conditions for sulfuration or selenization [9][10][11][12][13] . Recently, partial cation substitution of Cu + , Zn 2 + and Sn 4 + by Ag + , Cd 2 + and Ge 4 + has shown promising effect to boost the efficiency of kesterite solar cells [14][15][16][17][18][19][20] .…”

Section: Cu 2 Znsnsmentioning

confidence: 99%

Novel two-step CdS deposition strategy to improve the performance of Cu2ZnSn(S,Se)4 solar cell

Teng

Tong

Wang

et al. 2020

Journal of Energy Chemistry

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Controlled substitution of S by Se in reactively sputtered CZTSSe thin films for solar cells

Cited by 47 publications

References 41 publications

Improvement of thermoelectric performance of α-In₂Se₃upon S incorporation

Improvement of thermoelectric performance of α-In₂Se₃upon S incorporation

Improved thermoelectric performance of solid solution Cu4Sn7.5S16 through isoelectronic substitution of Se for S

Novel two-step CdS deposition strategy to improve the performance of Cu2ZnSn(S,Se)4 solar cell

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Controlled substitution of S by Se in reactively sputtered CZTSSe thin films for solar cells

Cited by 47 publications

References 41 publications

Improvement of thermoelectric performance of α-In2Se3upon S incorporation

Improvement of thermoelectric performance of α-In2Se3upon S incorporation

Improved thermoelectric performance of solid solution Cu4Sn7.5S16 through isoelectronic substitution of Se for S

Novel two-step CdS deposition strategy to improve the performance of Cu2ZnSn(S,Se)4 solar cell

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Improvement of thermoelectric performance of α-In₂Se₃upon S incorporation

Improvement of thermoelectric performance of α-In₂Se₃upon S incorporation