Controlling of Floating-Body and Thermal Conductivity in Short Channel SOI MOSFET at 30 nm Channel Node

Dutta, Pradipta; Behera, SubhashreeSoubhagyamayee; Rout, Soumendra Prasad

doi:10.1007/s12633-021-01027-1

Cited by 1 publication

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References 28 publications

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“…Partially depleted silicon-on-insulator (PDSOI) devices have the advantages of anti-latch-up, a small parasitic effect, fast speed and low power consumption compared with bulk silicon devices and are widely used in electronic communications, automotive electronics, medical, aerospace and other fields, while PDSOI devices have a self-heating effect and floating effect due to the presence of a buried oxygen layer [ 8 , 9 ]. This renders the degradation of PDSOI devices more complex than that of bulk silicon devices under applied stress, which also results in higher requirements for the reliability of the PDSOI device gate dielectric.…”

Section: Introductionmentioning

confidence: 99%

An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices

Liu

2023

Micromachines

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The stress-induced leakage current (SILC) degradation of partially depleted silicon in insulator (PDSOI) devices under constant voltage stress (CVS) was studied. Firstly, the behaviors of threshold voltage degradation and SILC degradation of H-gate PDSOI devices under constant voltage stress were studied. It was found that both the threshold voltage degradation and SILC degradation of the device are power functions of the stress time, and the linear behavior between SILC degradation and threshold voltage degradation is good. Secondly, the soft breakdown characteristics of the PDSOI devices were studied under CVS. Thirdly, the effects of different gate stresses and different channel lengths on the threshold voltage degradation and SILC degradation of the device were studied. The results showed SILC degradation of the device under positive CVS and SILC degradation of the device under negative CVS. The shorter the channel length of the device was, the greater the SILC degradation of the device was. Finally, the influence of the floating effect on the SILC degradation of the PDSOI devices was studied, and the experimental results showed that the degree of SILC degradation of the floating device was greater than that of the H-type grid body contact PDSOI device. This showed that the floating body effect can exacerbate the SILC degradation of PDSOI devices.

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Section: Introductionmentioning

confidence: 99%

An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices

Liu

2023

Micromachines

View full text Add to dashboard Cite

show abstract

Controlling of Floating-Body and Thermal Conductivity in Short Channel SOI MOSFET at 30 nm Channel Node

Cited by 1 publication

References 28 publications

An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices

An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices

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