The excellent physical and chemical properties of aluminum oxynitride, Al(O)N, along with the tunable luminescence features of cerium ions (Ce) hold a promising future in white light sources based on chip technology. Manipulation of the light emission color from blue to green, to yellow and finally to white is demonstrated for the first time in Ce-doped Al(O)N thin films by tuning of the local structure, electronic structure and film thickness. Analysis of the electronic structure by electron energy loss spectroscopy (EELS) at the Ce-M4,5, Al-L2,3, O-K and N-K edges and photoluminescence spectroscopies highlight the essential role of oxygen and post-deposition annealing in changing the valence state of Ce ions from Ce 4+(optically inactive) to Ce 3+ (optically active) as well as the local field around Ce 3+ and, finally, in activating excitation pathways through generation of specific defect complexes in the oxynitride matrix.