Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

Jankowski, Maciej; Kamiński, Daniel; Vergeer, Kurt; Mirolo, Marta; Carlà, Francesco; Rijnders, Guus; Bollmann, Tjeerd Rogier Johannes

doi:10.1088/1361-6528/aa61dd

Cited by 29 publications

(38 citation statements)

References 60 publications

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“…It is worth noting that the (110)‐orientated Bi film is only stable at the thickness of nanometer scale, making it difficult to be synthesized. In previous study, Bi (110) film was prepared by electron beam evaporator at a very low temperature of 40 K . Here, the UHV circumstance and good controlling of thickness of the PLD system enable the Bi (110) to be fabricated at RT.…”

Section: Resultssupporting

confidence: 72%

“…It is worth noting that the (110)-orientated Bi film is only stable at the thickness of nanometer scale, making it difficult to be synthesized. In previous study, Bi (110) film was prepared by electron beam evaporator at a very low temperature of 40 K. 35 Here, the UHV circumstance and good controlling of thickness of the PLD system enable the Bi (110) to be fabricated at RT. From the HRTEM and SAED results ( Figure 2E,F), a rectangular crystal lattice with 4-fold symmetry can be observed, showing same atomic arrangement as the schematic structure in Figure 2D.…”

Section: Resultsmentioning

confidence: 99%

“…It is worth noting that the orientation of ultrathin Bi films significantly determines their properties . More recently, the direct growth of Bi thin films with different orientations has been demonstrated . However, many properties of these films including achievable scale of the samples, morphology, details of crystal structure, and electrical properties are still unknown.…”

Section: Introductionmentioning

confidence: 99%

“…25,31,34 More recently, the direct growth of Bi thin films with different orientations has been demonstrated. 35 However, many properties of these films including achievable scale of the samples, morphology, details of crystal structure, and electrical properties are still unknown. To incorporate 2D Bi into potential applications, controlled synthesis of wafer-scale and high-quality atomically thin films would be prerequisite challenge.…”

Section: Introductionmentioning

confidence: 99%

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Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Yang

Lyu

et al. 2019

InfoMat

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Ever since discovery of graphene, two‐dimensional (2D) materials become a new tool box for information technology. Among the 2D family, ultrathin bismuth (Bi) has attracted a great deal of attention in recent years due to its unique topological insulating properties and large magnetoresistance. However, the scalable synthesis of layered Bi ultrathin films is rarely been reported, which would greatly restrict further fundamental investigation and practical device development. Here, we demonstrate the direct growth of homogeneous and centimeter‐scale layered Bi films by pulsed laser deposition (PLD) technique. The as‐grown Bi film exhibits high‐purity phase and good crystallinity. In addition, both (111) and (110)‐oriented Bi films can be synthesized by precisely controlling the processing temperature. The characterization of optical properties shows a thickness dependent band gaps (0.075‐0.2 eV). Moreover, Bi thin‐film‐based field‐effect transistors have been demonstrated, exhibiting a large carrier mobility of 220 cm2 V−1 s−1. Our work suggests that the PLD‐grown Bi films would hold the potential to develop spintronic applications, electronic and optoelectronic devices used for information science and technology.

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Section: Resultssupporting

confidence: 72%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Yang

Lyu

et al. 2019

InfoMat

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“…Note that we fit up to limited 2θ angle (see the dashed line in Fig. 8) to ensure the dynamical scattering theory is applicable and stay far from the kinetical scattering regime [33,34]. From this we find a steep roughness increase going from 5 pairs (R C rms =0.27 nm and R N i rms =0.41 nm) to 10 pairs of Ni/C multi-layers (R C rms =1.3 nm and R N i rms =2.1 nm) grown by PLD at RT.…”

Section: Resultsmentioning

confidence: 99%

Studying Pulsed Laser Deposition conditions for Ni/C-based multi-layers

Bollmann

2018

Applied Surface Science

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Nickel carbon based multi-layers are a viable route towards future hard X-ray and soft γ-ray focusing telescopes. Here, we study the Pulsed Laser Deposition growth conditions of such bilayers by Reflective High Energy Electron Diffraction, X-ray Reflectivity and Diffraction, Atomic Force Microscopy, X-ray Photoelectron Spectroscopy and cross-sectional Transmission Electron Microscopy analysis, with emphasis on optimization of process pressure and substrate temperature during growth. The thin multi-layers are grown on a treated SiO substrate resulting in Ni and C layers with surface roughnesses (RMS) of ≤0.2 nm. Small droplets resulting during melting of the targets surface increase the roughness, however, and can not be avoided. The sequential process at temperatures beyond 300• C results into intermixing between the two layers, being destructive for the reflectivity of the multi-layer.

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Evidence of Directional Structural Superlubricity and Lévy Flights in a van der Waals Heterostructure

Le Ster,

Krukowski,

Rogala

et al. 2024

Small

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Structural superlubricity is a special frictionless contact in which two crystals are in incommensurate arrangement such that relative in‐plane translation is associated with vanishing energy barrier crossing. So far, it has been realized in multilayer graphene and other van der Waals (2D crystals with hexagonal or triangular crystalline symmetries, leading to isotropic frictionless contacts. Directional structural superlubricity, to date unrealized in 2D systems, is possible when the reciprocal lattices of the two crystals coincide in one direction only. Here, directional structural superlubricity a α‐bismuthene/graphite van der Waals system is evidenced, manifested by spontaneous hopping of the islands over hundreds of nanometers at room temperature, resolved by low‐energy electron microscopy and supported by registry simulations. Statistical analysis of individual and collective α‐bismuthene islands populations reveal a heavy‐tailed distribution of the hopping lengths and sticking times indicative of Lévy flight dynamics, largely unobserved in condensed‐matter systems.

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Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

Abstract: Here we demonstrate the controlled growth of Bi (110) and Bi(111) films on an (insulating) α-Al 2 O 3 (0001) substrate by surface X-ray diffraction and X-ray reflectivity using synchrotron ra- 1 arXiv:1611.04556v1 [cond-mat.mtrl-sci]

Cited by 29 publications

References 60 publications

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Studying Pulsed Laser Deposition conditions for Ni/C-based multi-layers

Evidence of Directional Structural Superlubricity and Lévy Flights in a van der Waals Heterostructure

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