Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Abstract

A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface. Irradiation with positive ions exhibits oxide removal, while irradiation with negative ions shows an intense oxidation of the sample surface. Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum. After cleaning in a vacuum of 10 -9 Pa, the silicon surface begins to oxidize again within 10 min.

Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

“…Silicon wafers are squares (15 Â 15 mm). Before the deposition of a LiF film on a Si(111) substrate, the sample surface was cleaned by ion etching followed by annealing in a high vacuum with a short-term increase in temperature to 700 C. 25 The surface cleanliness was monitored using the SIMS and TC spectra. 25 The working vacuum during the research was 10 À8 Pa.…”

“…Today, high‐tech materials, in contrast to bulk materials, have special surface properties with special performance characteristics 21,22 . Investigation of the processes of modification of the surface properties of materials by bombardment with electrons and ions is one of the most important areas of materials science 23–26 . Additionally, in the production of chips for doping and diffusion processes, in addition to the quality of the surface structure, the choice of the crystallographic orientation of the substrate crystals 7,23 is of great importance; for example, in the (111) plane, more defects are formed than in the (100) plane due to the high surface packing density of atoms 27 …”

“…21,22 Investigation of the processes of modification of the surface properties of materials by bombardment with electrons and ions is one of the most important areas of materials science. [23][24][25][26] Additionally, in the production of chips for doping and diffusion processes, in addition to the quality of the surface structure, the choice of the crystallographic orientation of the substrate crystals 7,23 is of great importance; for example, in the (111) plane, more defects are formed than in the (100) plane due to the high surface packing density of atoms. 27 Research in the field of defect formation plays a key role in solving the problems of nanoepitaxy 28,29 and obtaining data on the physics and chemistry of the interaction of radiation with the surface of crystals.…”

Cпектроскопия Полного Тока Окисленного Кремния

“…Подробное описание методики спектрометрии полного тока имеется в [27][28][29][30][31][32][33]. Спектры ПТ кристаллов кремния получены при облучении электронами с энергией 0−100 эВ, ток ~10 -8 А (ток ионов Cs + и Cl − ~10 -6 А, энергия 3 кэВ).…”

Investigation Ne ions scattering from the stepped InP(001)<ī10> surface

“…During the interaction of ions with the surface of a solid, processes are observed: secondary ion emission, scattering of ions, penetration of ions into a solid, and others that are of great scientific interest in fundamental research [1][2]. Ion scattering spectroscopy allows you to quickly control and obtain information about the concentration of the analyzed elements in the surface layers without destroying its structure [3][4].…”