Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS
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Vaskivskyi, Igor; Gospodarič, Jan; Brazovskiǐ, S.; Svetin, Damjan; Šutar, Petra; Goreshnik, Evgeny; Mihailovic, Ian A.; Mertelj, T.; Mihailović, D.

doi:10.1126/sciadv.1500168

Cited by 172 publications

(181 citation statements)

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“…all the "David Stars" should be melted. Experimentally, holes can directly be introduced by a positive electric field perpendicular to the sample [27], or by light [26,[28][29][30]. One can expect that in reality the doped holes will firstly distribute in a local area and gradually diffuse out, i.e.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the photoexcitation of electrons can be considered as directly doping holes into system. Mihailovic's group found a laser pulse can introduce a transition from CCDW to a hidden state in 1T -TaS 2 thin flake [26,29]. The Raman spectrum of such hidden state is completely different from that in CCDW and NCCDW phases [29].…”

Section: Resultsmentioning

confidence: 99%

“…The Raman spectrum of such hidden state is completely different from that in CCDW and NCCDW phases [29]. Such hidden state is demonstrated to be a metastable phase, which is different from NCCDW, but should be composed of CCDW domains and ICCDW network as well [26,29]. Han et al observed the electron diffraction spots varies from CCDW case to ICCDW case when applying laser to TaS 2 in CCDW phase [30].…”

Section: Resultsmentioning

confidence: 99%

“…Yu et al reported a gate-controlled Li ion intercalation can suppress CCDW and introduce superconducivity [21]. Tsen et al [22], Hollander et al [23], Yoshida et al [24], and Mihailovic et al [25,26] reported the in-plane electric field induced transition from CCDW state to NCCDW or some metastable hidden state. Cho et al applied perpendicular electric pulse on 1T -TaS 2 and found positive electric pulse can introduce IC network to suppress Mott state at low temperature [27].…”

Section: Introductionmentioning

confidence: 99%

“…Cho et al applied perpendicular electric pulse on 1T -TaS 2 and found positive electric pulse can introduce IC network to suppress Mott state at low temperature [27]. Moreover, Zhang et al [28], Mihailovic et al [26,29], and Han et al [30] suggested that light can introduce a transition from CCDW state to NCCDW or hidden state as well. In all those manipulations, the transitions are considered to be determined by the charge carrier doping.…”

Section: Introductionmentioning

confidence: 99%

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Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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The transition metal dichalcogenide (TMD) 1T -TaS2 exhibits a rich set of charge density wave (CDW) orders. Recent investigations suggested that using light or electric field can manipulate the commensurate (C) CDW ground state. Such manipulations are considered to be determined by the charge carrier doping. Here we simulate by first-principles calculations the carrier doping effect on CCDW in 1T -TaS2. We investigate the charge doping effects on the electronic structures and phonon instabilities of 1T structure and analyze the doping induced energy and distortion ratio variations in CCDW structure. We found that both in bulk and monolayer 1T -TaS2, CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric field induced hole doping increases the energy of CCDW, so that the system transforms to NCCDW or similar metastable state. On the other hand, even the CCDW distortion is more stable upon in-plain electric field induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from CCDW to nearly commensurate (NC) CDW or similar metastable state. We also estimate that hole doping can introduce potential superconductivity with Tc of 6 ∼ 7 K. Controllable switching of different states such as CCDW/Mott insulating state, metallic state, and even the superconducting state can be realized in 1T -TaS2, which makes the novel material have very promising applications in the future electronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Shao¹,

Xiao²,

Lu³

et al. 2016

Phys. Rev. B

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Role of Charge Density Wave in Monatomic Assembly in Transition Metal Dichalcogenides

Feng

Zhuang

et al. 2019

Adv Funct Materials

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The charge density wave (CDW) in transition metal dichalcogenides (TMDs) has drawn tremendous interest due to its potential for tailoring their surface electronic and chemical properties. Due to technical challenges, however, how the CDW could modulate the chemical behavior of TMDs is still not clear. Here, this work presents a study of applying the CDW of NbTe 2 , with a high transition temperature above room temperature, to generate the assembling adsorption of Sn adatoms on the surface. It is shown that highly ordered monatomic Sn adatoms with a quasi-1D structure can be obtained under regulation by the singleaxis CDW of the substrate. In addition, the CDW modulated superlattices could in turn change the surface electronic properties from semimetallic to metallic. These results demonstrate an effective approach for tuning the surface chemical properties of TMDs by their CDWs, which could be applied in exploring them for various practical applications, such as heterogeneous catalysis, epitaxial growth of low-dimensional materials, and future nanoelectronics. Disciplines DisciplinesEngineering | Physical Sciences and Mathematics AbstractThe charge density wave (CDW) in transition metal dichalcogenides (TMDs) has drawn tremendous interest due to its potential for tailoring their surface electronic and chemical properties. Due to technical challenges, however, how the CDW could modulate the chemical behavior of TMDs is still not clear. Here, this work presents a study of applying the CDW of NbTe2, with a high transition temperature above room temperature, to generate the assembling adsorption of Sn adatoms on the surface. It is shown that highly ordered monatomic Sn adatoms with a quasi-one-dimensional structure can be obtained under regulation by the single-axis CDW of the substrate. In addition, the CDW modulated superlattices could in turn change the surface electronic properties from semi-metallic to metallic. These results demonstrate an effective approach for tuning the surface chemical properties of TMDs by their CDWs, which could be applied in exploring them for various practical applications, such as heterogeneous catalysis, epitaxial growth of low-dimensional materials, and future nanoelectronics.Received: ((will be filled in by the editorial staff)) Revised: ((will be filled in by the editorial staff)) Published online: ((will be filled in by the editorial staff))

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2D Material Based Synaptic Devices for Neuromorphic Computing

Cao

Peng

Chen

et al. 2020

Adv Funct Materials

223

168

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The demand for computing power has been increasing exponentially since the emergence of artificial intelligence (AI), internet of things (IoT), and machine learning (ML), where novel computing primitives are required. Brain inspired neuromorphic computing systems, capable of combining analog computing and data storage at the device level, have drawn great attention recently. In addition, the basic electronic devices mimicking the biological synapse have achieved significant progress. Owing to their atomic thickness and reduced screening effect, the physical properties of 2D materials could be easily modulated by various stimuli, which is quite beneficial for synaptic applications. In this article, aiming at high‐performance and functional neuromorphic computing applications, a comprehensive review of synaptic devices based on 2D materials is provided, including the advantages of 2D materials and heterostructures, various robust multifunctional 2D synaptic devices, and associated neuromorphic applications. Challenges and strategies for the future development of 2D synaptic devices are also discussed. This review will provide an insight into the design and preparation of 2D synaptic devices and their applications in neuromorphic computing.

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Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS ₂

Abstract: Revealing the relaxation mechanisms of hidden states in transition metal dichalcogenides leads to control of metastability.

Cited by 172 publications

References 44 publications

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Role of Charge Density Wave in Monatomic Assembly in Transition Metal Dichalcogenides

2D Material Based Synaptic Devices for Neuromorphic Computing

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Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS 2

Abstract: Revealing the relaxation mechanisms of hidden states in transition metal dichalcogenides leads to control of metastability.

Cited by 172 publications

References 44 publications

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Manipulating charge density waves in1T−TaS2by charge-carrier doping: A first-principles investigation

Role of Charge Density Wave in Monatomic Assembly in Transition Metal Dichalcogenides

2D Material Based Synaptic Devices for Neuromorphic Computing

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Product

Resources

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Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS ₂