Hidden states of matter may be created if a system out of equilibrium follows a trajectory to a state that is inaccessible or does not exist under normal equilibrium conditions. We found such a hidden (H) electronic state in a layered dichalcogenide crystal of 1T-TaS2 (the trigonal phase of tantalum disulfide) reached as a result of a quench caused by a single 35-femtosecond laser pulse. In comparison to other states of the system, the H state exhibits a large drop of electrical resistance, strongly modified single-particle and collective-mode spectra, and a marked change of optical reflectivity. The H state is stable until a laser pulse, electrical current, or thermal erase procedure is applied, causing it to revert to the thermodynamic ground state.

The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of ions, but their speed is limited by slow nucleation and inhomogeneous percolative growth. Here we demonstrate fast resistance switching in a charge density wave system caused by pulsed current injection. As a charge pulse travels through the material, it converts a commensurately ordered polaronic Mott insulating state in 1T–TaS2 to a metastable electronic state with textured domain walls, accompanied with a conversion of polarons to band states, and concurrent rapid switching from an insulator to a metal. The large resistance change, high switching speed (30 ps) and ultralow energy per bit opens the way to new concepts in non-volatile memory devices manipulating all-electronic states.

Revealing the relaxation mechanisms of hidden states in transition metal dichalcogenides leads to control of metastability.

The fundamental idea that the constituents of interacting many body systems in complex quantum materials may self-organise into long range order under highly non-equilibrium conditions leads to the notion that entirely new and unexpected functionalities might be artificially created. However, demonstrating new emergent order in highly non-equilibrium transitions has proven surprisingly difficult. In spite of huge recent advances in experimental ultrafast time-resolved techniques, methods that average over successive transition outcomes have so far proved incapable of elucidating the emerging spatial structure. Here, using scanning tunneling microscopy, we report for the first time the charge order emerging after a single transition outcome initiated by a single optical pulse in a prototypical two-dimensional dichalcogenide 1T-TaS 2. By mapping the vector field of charge displacements of the emergent state, we find surprisingly intricate, long-range, topologically non-trivial charge order in which chiral domain tiling is intertwined with unpaired dislocations which play a crucial role in enhancing the emergent states' remarkable stability. The discovery of the principles that lead to metastability in charge-ordered systems opens the way to designing novel emergent functionalities, particularly ultrafast all-electronic non-volatile cryo-memories.