Controlling the spin polarization of the electron current in a semimagnetic resonant-tunneling diode

Beletskii, N. N.; Berman, G. P.; Borysenko, S. A.

doi:10.1103/physrevb.71.125325

Cited by 17 publications

(13 citation statements)

References 29 publications

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“…Recently, Borza et al (2007) investigated the interesting possibility of an electric field manipulation of the electronic states in a two-partitioned quantum well, which consists of a magnetic and nonmagnetic layer, resulting in the forming of a potential step in the quantum well for one spin component, while the other experiences a deeper well in the magnetic layer region. Also all-magnetic RTD, in which the whole structure including the barriers, the emitter and collector lead consists of II-VI DMSs layers of different magnetic ion concentrations x, were investigated, e.g., using Zn 1−x Mn x S (Beletskii et al, 2005), or Cd 1−x Zn x Te (Chitta et al, 1999). In the latter work also the influence of spin flip scattering caused by thermal fluctuations of the magnetic ion moments was taken into account, showing that it is inefficient in depolarizing the current.…”

Section: C3 Paramagnetic Spin-rtdsmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

921

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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Section: C3 Paramagnetic Spin-rtdsmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

921

1,204

View full text Add to dashboard Cite

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“…These systems have recently received attention [7], [8], [9], [10], [11], [12]. A RTD is a widely studied quantum semiconductor device which is the analog of the optical Fabry-Perot resonator [13].…”

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confidence: 99%

Spin-Polarized Transport in II–VI Magnetic Resonant-Tunneling Devices

Sánchez

Gould

Schmidt

et al. 2007

IEEE Trans. Electron Devices

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Abstract-We investigate electronic transport through II-VI semiconductor resonant tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant Zeeman splitting in the presence of a moderately low magnetic field. As a consequence, when the quantum well is magnetically doped the current-voltage characteristics shows two peaks corresponding to transport for each spin channel. This behavior is experimentally observed and can be reproduced with a simple tunneling model. The model thus allows to analyze other configurations. First, we further increase the magnetic field, which leads to a spin polarization of the electronic current injected from the leads, thus giving rise to a relative change in the current amplitude. We demonstrate that the spin polarization in the emitter can be determined from such a change. Furthermore, in the case of a magnetically doped injector our model shows a large increase in peak amplitude and a shift of the resonance to higher voltages as the external field increases. We find that this effect arises from a combination of giant Zeeman splitting, 3-D incident distribution and broad resonance linewidth.

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“…1,2 II-VI semiconductor quantum structures based on ZnSe or CdTe, especially with diluted magnetic semiconductors (DMS), are of special interest because they enable us to optimize the transport properties by manipulating the external magnetic and electric fields. [3][4][5][6][7][8][9][10][11] In a Zn 1−x Mn x Se/ZnSe heterostructure with a single DMS layer, Egues 4 pointed out that increasing magnetic field leads to a strong suppression of the spin-up component of the current density, which were demonstrated by Slobodskyy et al 6 Later, DMS heterostructures with the inclusion of the nonmagnetic barrier (NB, such as ZnBeSe, ZnMgSe, etc.) have also been investigated, both theoretically [12][13][14][15][16][17] and experimentally.…”

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confidence: 95%

Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

2015

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We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

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Controlling the spin polarization of the electron current in a semimagnetic resonant-tunneling diode

Cited by 17 publications

References 29 publications

Semiconductor spintronics

Semiconductor spintronics

Spin-Polarized Transport in II–VI Magnetic Resonant-Tunneling Devices

Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

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