1996
DOI: 10.1016/s0921-5107(96)01679-0
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Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

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Cited by 4 publications
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“…the oxide was formed by implanting with high doses of oxygen, (the SIMOX process). 4 In all these cases, the shallow defects are only visible when x d (MOS) is reduced by biasing at some intermediate value between strong inversion (x d ϭ x dmax ) and accumulation (x d r 0). This type of behavior has been defined as transition bias contrast and is discussed further in the next section.…”
Section: Resultsmentioning
confidence: 97%
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“…the oxide was formed by implanting with high doses of oxygen, (the SIMOX process). 4 In all these cases, the shallow defects are only visible when x d (MOS) is reduced by biasing at some intermediate value between strong inversion (x d ϭ x dmax ) and accumulation (x d r 0). This type of behavior has been defined as transition bias contrast and is discussed further in the next section.…”
Section: Resultsmentioning
confidence: 97%
“…In addition, i ox contrast varies greatly as a function of the electric field strength in the oxide and the detailed nature of the specific defect. In the literature, individual oxide defects have been reported to produce i ox contrast under a number of disparate conditions, including (i) at all biases prior to breakdown, 4,[11][12][13] (ii) only at high biases (> 4 MV/cm) prior to breakdown, 30,31 and (iii) only after oxide breakdown. 5,6,13,14 One reason for this complex contrasting behavior is that the electron beam enhancement of i ox occurs by at least two distinct mechanisms.…”
Section: Resultsmentioning
confidence: 99%
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