Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal–oxide–semiconductor field-effect transistors

Abstract

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Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs

“…We can see that the current degradations of the device with 𝐿 ch,eff = 0.65 µm are positive, which means that the currents decrease with the stressing time, and the 𝐼 dsat degradation is smaller than 𝐼 dlin degradation due to the mask effect of the velocity saturation region. [6] Moreover, with reducing 𝐿 ch,eff , the 𝐼 dlin degradation is enhanced, which is consistent with former literature. [7,8] However, it is interesting that, with 𝐿 ch,eff decreases from 0.65 µm to 0.45 µm, the 𝐼 dsat degradation is unexpected alleviated and even changes the sign to negative (current increases with the stress time).…”

“…[1−4] There are studies finding that the saturation drain current (𝐼 dsat ) degradation can better reflect the circuit speed degradation compared with the linear drain current (𝐼 dlin ) degradation. [5,6] Therefore, the 𝐼 dsat degradation is usually adopted to evaluate the hot-carrier lifetime of an MOSFET, especially for MOSFETs in logic applications. To improve the circuit performance, the effective channel length (𝐿 ch,eff ) of the device is always reduced as much as possible.…”

Degradations of Threshold Voltage, Mobility, and Drain Current and the Dependence on Transistor Geometry For Stressing at 77 K and 300 K

“…Deptuch, Senior Member, IEEE, J. R. Hoff, and Ping Gui, Senior Member, IEEE Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K current degradation is often used as the indicator of hot-carrier effect. Specifically, a drain current degradation in the linear region ( ܸ ீௌ = ܸ , ܸ ௌ = 0.05 V or 0.1 V , and ܸ is the power supply voltage) is the bias condition of choice for most experimenters because under these conditions the entire length of the channel, including the damaged region is in inversion [8] [9]. Therefore, after each stress time step, the drain current ‫ܫ‬ versus ܸ ீௌ at ܸ ௌ = 0.05 V was measured and the drain current degradation ‫ܫ∆‬ / ‫ܫ‬ was examined.…”