2016
DOI: 10.1021/acs.cgd.6b01107
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Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth

Abstract: The conversion of threading screw dislocations (TSDs) to defects on the basal plane during SiC solution growth caused by macrostep advance is a key factor to improve crystal quality. We realized the TSD conversion in 4H-SiC C face solution growth by modification of the surface morphology including macrosteps by addition of 5 atom % Ti into pure Si solvent. Synchrotron X-ray topography revealed that the possibility of TSD conversion increased to about 10% with the addition of 5 atom % Ti. In addition, the TSD c… Show more

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Cited by 22 publications
(16 citation statements)
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“…As an alternative growing method for SiC bulk crystal, the top seeded solution growth (TSSG) method has been developed for the last two decades. [3][4][5] The TSSG method has been conrmed to be advantageous in obtaining highquality SiC crystals by reducing the dislocation density [6][7][8] and with a reasonable growth rate such that TSSG is now assumed as the next-generation fabrication method of SiC crystals.…”
Section: Introductionmentioning
confidence: 99%
“…As an alternative growing method for SiC bulk crystal, the top seeded solution growth (TSSG) method has been developed for the last two decades. [3][4][5] The TSSG method has been conrmed to be advantageous in obtaining highquality SiC crystals by reducing the dislocation density [6][7][8] and with a reasonable growth rate such that TSSG is now assumed as the next-generation fabrication method of SiC crystals.…”
Section: Introductionmentioning
confidence: 99%
“…Alternative crystal growth techniques including high temperature chemical vapor deposition (HTCVD) method and top seeded solution growth (TSSG) method are examined to solve the quality issues in SiC . Specifically, TSSG is known as a promising technique because it produces extremely high quality SiC crystal with low dislocation density . In the TSSG, a seed crystal is positioned on the top of the silicon melt that contains dissolved carbon, and the crystals are grown in the interface between the seed crystal and silicon melt typically at temperatures in the range of 1700–2100 °C.…”
Section: Introductionmentioning
confidence: 99%
“…Since solution growth of SiC has advantages in obtaining highquality bulk crystals using dislocation conversion, [10,11,14,15,[33][34][35][36][37] many researchers have reported the bulk crystal growth of SiC, especially by the TSSG method. [12,13,[38][39][40][41][42][43] Recently, crystal growth of SiC wafers with a diameter of 4 in.…”
Section: Design Of Objective Functions For 6-in Sic Crystal Growthmentioning
confidence: 99%