Copper Chemical Vapor Deposition Films Deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane

Lin, Pi–Jiun; Chen, Mao‐Chieh

doi:10.1143/jjap.38.4863

Cited by 40 publications

(26 citation statements)

References 15 publications

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“…This value of Ea is smaller than the value of 17.90 kcal/mol ͑deposited on TiN substrate at 0.5 Torr͒ reported in literature. 23,24 The slightly higher resistivity at low deposition temperatures is presumably due to higher contamination of residual impurities from the reaction byproducts, while the high resistivity at high deposition temperatures results from the higher contamination of impurities in the film as well as the porous film structure. The resistivity of Cu films was calculated using the measured sheet resistances and films thicknesses.…”

Section: A Chemical Vapor Deposition Cu Films On Tan Substrates Withmentioning

confidence: 99%

Characteristics of copper films deposited on H2-plasma-treated TaN substrate by chemical vapor deposition

Lin

Chen

Chang

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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This work investigates the chemical vapor deposition Cu films deposited on the TaN substrate with and without an H 2 -plasma treatment prior to Cu film deposition and the effect of postdeposition thermal annealing. The Cu films deposited on the H 2 -plasma-treated TaN substrate have a number of favorable properties over the films deposited on the TaN substrate without the plasma treatment. These include an increased ͑111͒-preferred orientation, smoother film surface, and a larger effective deposition rate. However, the Cu films deposited on the H 2 -plasma-treated substrate have a higher electrical resistivity, presumably due to the smaller grain size. The postdeposition thermal annealing enhanced the ͑111͒-preferred orientation and decreased the resistivity of the as-deposited Cu films. We presume that the H 2 -plasma treatment, resulted in a dense and uniform distribution of hydrogen radicals adsorbed on the substrate surface, leading to the shortening of incubation time and the formation of Cu films with a smoother surface and enhanced ͑100͒-preferred orientation. A combined process including H 2 -plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N 2 ambient, is proposed for the advantage of low-resistivity and high ͑111͒-oriented Cu film deposition.

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Section: A Chemical Vapor Deposition Cu Films On Tan Substrates Withmentioning

confidence: 99%

Characteristics of copper films deposited on H2-plasma-treated TaN substrate by chemical vapor deposition

Lin

Chen

Chang

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…However, copper is known to diffuse rapidly through SiO 2 . [1][2][3][4][5][6] Thus, it is necessary to introduce a diffusion barrier between the Cu and the dielectrics. In addition, Cu also suffers from poor adhesion to SiO 2 dielectrics, due to its inability to reduce SiO 2 , which causes a rapid mass diffusion along the interface and surfaces, resulting in degraded reliability.…”

Section: Introductionmentioning

confidence: 99%

The effects of boron in the Cu(B)/Ti/SiO2 system on the Cu-Ti reaction, resistivity, and diffusion barrier properties

Yang

Lee

Park

et al. 2005

Journal of Elec Materi

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The behavior of boron in Cu(4.8at.%B)/Ti/SiO 2 was investigated as a function of temperature, and its influences on the Cu-Ti interaction, resistivity, and diffusion barrier properties were also studied. The results showed the formation of a titanium boride layer at the Cu-Ti interface, after heating the Cu(B)/Ti/SiO 2 at 400°C and higher, effectively served as a barrier for the Cu and Ti diffusion, and significantly enhanced the Cu (111) texture. The resistivity dropped from 16.3 to 2.33 µΩ-cm after heating at 600°C, and continued to decrease up to 800°C. As a result, the Cu, in the form of B(O) x /Cu/TiB 2 /Ti(O) x /SiO 2 multilayers, obtained by heating the Cu(B)/Ti/SiO 2 , showed high thermal stability with low resistivity and, thus, can be used as interconnections in advanced integrated circuits. Since the Cu, in the form of B(O) x /Cu/TiB 2 /Ti(O) x /SiO 2 multilayers, obtained by heating the Cu(B)/Ti/SiO 2 , showed high thermal stability with low resistivity, it can be used as interconnections in advanced integrated circuits.

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“…[1][2][3][4][5][6] However, important technical problems that need to be addressed include: passivation of the exposed Cu surface against oxidation, adhesion of Cu to SiO 2 , development of a process for patterning Cu, and the high diffusivity of Cu in Si and SiO 2 . 7-9 A number of approaches have been explored to address these problems, such as the development of Cu passivation methods and diffusion barrier materials.…”

Section: Introductionmentioning

confidence: 99%

Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture

Lee

Park

Kang

et al. 2001

J. Electron. Mater.

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The deposition characteristics of Ti-Si-N films obtained by using RF reactive sputtering of various targets in N 2 /Ar gas mixtures have been investigated. The dependence of film growth rate and stoichiometry on both the Ti/Si ratio of the target and the N 2 flow rate were found to be due to the different nitridation rates of Ti and Si, resulting in different sputter yields of titanium and silicon nitrides. XPS results showed that an increase in nitrogen content of the Ti-Si-N films leads to the formation of amorphous Si 3 N 4 bonding, which produces an increase in resistivity. Lowering the Si content in the deposited Ti-Si-N films favors the formation of crystalline TiN, even at low N 2 flow rates, and leads to a lower resistivity. A film growth mechanism, expressed in terms of the nitrogen surface coverage on the target, was proposed.

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Copper Chemical Vapor Deposition Films Deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane

Cited by 40 publications

References 15 publications

Characteristics of copper films deposited on H2-plasma-treated TaN substrate by chemical vapor deposition

Characteristics of copper films deposited on H2-plasma-treated TaN substrate by chemical vapor deposition

The effects of boron in the Cu(B)/Ti/SiO2 system on the Cu-Ti reaction, resistivity, and diffusion barrier properties

Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture

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