Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films was dependent on the film's microstructure and impurity content, which in turn were dependent on the deposition conditions. Using H2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Å/min. The lowest resistivity Cu films can be deposited at a temperature of 180°C and a pressure of 300 mTorr.

Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilane (Cu(hfac)TMVS) was studied using a low pressure chemical vapor deposition system of a cold wall vertical reactor. The Cu films deposited using H 2 as a carrier gas revealed no impurities in the films within the detection limits of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Using hydrogen as a carrier gas, the hydrogen not only acts as a reducing agent, but also reacts with the residual fragment of precursor. As a result, using H 2 as a carrier gas for Cu(hfac)TMVS resulted in Cu films of lower resistivity, denser microstructure and faster deposition rate than using Ar or N 2 as the carrier gas. Moreover, we found that N 2 plasma treatment on the substrate surface prior to Cu deposition increased the deposition rate of Cu films.