Copper corrosion issue and analysis on copper damascene process

Song, Zhigang; Neo, S.P.; Oh, Chong Khiam; Redkar, S.; Lee, Yuan-Ping

doi:10.1109/tdmr.2005.846826

Cited by 10 publications

(3 citation statements)

References 8 publications

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“…As mentioned previously (1), CMP is the key step of tungsten plug formation for metal W plug PATC recess becomes one of the critical issues for metal interconnection. In this paper, we will analyze the root cause of the photo assistant tungsten plug corrosion (PATC), which occurs on the metal line connected to nMOS contacts (P-Well) when it is exposed to electrolyte and illuminated by light, which has sufficient energy to create electron-hole pairs, as showed in Fig 2.…”

Section: W Recess and Failure Analysismentioning

confidence: 93%

Solution to W Plug Patc Recess Issue for W CMP Process

et al. 2014

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W CMP process plays an important role to form the contact W plug. We had faced a severe issue of W plug recess during W CMP process. In this paper, a solution to above issue will be reported. Firstly, the characteristic and mechanism of W plug recess in W CMP process will be elaborated. Secondly, an improved method to solve the issue will be described. The selection of buffing slurry plays a critical role to find the solution. Next, the impact of W plug recess on the electric performance in the whole integration scheme will be analyzed. In addition, the optimization process with the improved method for other post CMP performance, such as uniformity, oxide loss, W plug protrusion and defectivity etc. will be reported as well. In a summary, a corrosion free W CMP process has been achieved with the improvement in oxide buffing step of W CMP process. The contact resistant performance has been improved and the wafer yield has been significantly increased.

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Section: W Recess and Failure Analysismentioning

confidence: 93%

Solution to W Plug Patc Recess Issue for W CMP Process

et al. 2014

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“…The end point of CMP is difficult to detect. The undesirable pattern dishing and surface erosion phenomena are often observed (15)(16)(17). On the other hand, although plasma etching has been used to prepare metal interconnect lines to achieve tight critical dimension (CD) control and low undercut (18,19), it is not applicable to Cu etch due to the low volatility of the plasma-Cu reaction products (20,21).…”

Section: Introductionmentioning

confidence: 99%

Reliability of Complete Plasma Etched Ru/Cu Lines

Su¹,

Kuo²

2022

ECS Trans.

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The reliability of oxygen plasma-etched ruthenium/copper thin film stacks was studied under constant-current density and constant-voltage stress conditions. The thin ruthenium served as an adhesion layer for copper. The lifetime of the ruthenium/copper line was determined from resistance-time measurements. The ruthenium/ copper line had a longer lifetime than the titanium tungsten/copper line. The line failure process started from voids formation followed by growth and merging, which could be correlated to the change of the surface topography, especially near the broken area. Ruthenium can be a promising barrier material for interconnect copper lines.

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“…The effects of light from the cleanroom on wet etching of SiO 2 films on n+ and p+ diffusion area were firstly identified by Nielsen and Hackleman. 3) Many studies [4][5][6][7][8] of photoassisted corrosion in silicon (Si) devices have been conducted and it has been reported that a copper (Cu) line connected to the Pwell is corroded by an anodic reaction and deposits Cu on the N-well by a cathodic reaction. Homma et al 4) investigated the photoassisted corrosion of a damascene copper line in the postpolishing cleaning process.…”

Section: Introductionmentioning

confidence: 99%

Analysis on Copper Photocorrosion Induced by Illuminance in Chemical Mechanical Planarization Equipment Using Photodiode and Quartz Crystal Microbalance

Shima

Wada

Tokushige

et al. 2010

Jpn. J. Appl. Phys.

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Photoassisted corrosion of copper (Cu) was evaluated using a photodiode and a quartz crystal microbalance (QCM). A chip-type silicon (Si) photodiode with a large junction area was used in place of actual Si devices. When the illuminated photodiode was connected to the anode and cathode electrodes in an electrolyte, it worked as a voltage source between the two electrodes, and the corrosion rate was governed by the current between the electrodes. The corrosion rate is nearly proportional to the illuminance at less than 100 lx, and corrosion initiates at an illuminance as low as 1 lx. In the geometrical aspect of the photoassisted corrosion system, the corrosion rate is proportional to the square root of the area ratio of a P-connected Cu line to an N line, and is proportional to the illuminated area of the junction in a photodiode. The wavelength of the illuminating light markedly affects the photoassisted corrosion.

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Copper corrosion issue and analysis on copper damascene process

Cited by 10 publications

References 8 publications

Solution to W Plug Patc Recess Issue for W CMP Process

Solution to W Plug Patc Recess Issue for W CMP Process

Reliability of Complete Plasma Etched Ru/Cu Lines

Analysis on Copper Photocorrosion Induced by Illuminance in Chemical Mechanical Planarization Equipment Using Photodiode and Quartz Crystal Microbalance

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