Copper deposition by electron cyclotron resonance plasma

Holber, W. M.; Logan, J. S.; Grabarz, H. J.; Yeh, J. T. C.; Caughman, J. B. O.; Sugerman, A.; Turene, F. E.

doi:10.1116/1.578666

Cited by 85 publications

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“…Generally speaking, a higher deposition rate can shorten the required deposition time which will prevent Cu atoms from sufficiently exposing to O 2 . This should be the main reason why the DC mode with larger sputtering power density tends to achieve pure Cu film while RF mode or smaller sputtering power density tends to form Cu film with Cu 2 We further studied the electrical resistivities and band gaps of the obtained Cu-based films. Among these, it is found that the pure Cu film and the Cu/Cu 2 O composite film both display an intriguing combination of metal and semiconductor characteristics.…”

Section: Resultsmentioning

confidence: 99%

“…Among these, it is found that the pure Cu film and the Cu/Cu 2 O composite film both display an intriguing combination of metal and semiconductor characteristics. For example, the electrical resistivities of a 31 nm-thick pure Cu film and a 72 nm-thick Cu/Cu 2 O (~10 at.% Cu 2 O) composite film are 1.2×10 −4 and 6.2×10 −5 Ω cm respectively; while the band gaps E g , which were estimated according to the prolongation (dotted lines) of linear sections of (Ahv) 2 -hv curves (solid lines) in Fig. 1, are 1.54 and 2.48 eV respectively for the 31 nm-thick pure Cu film and 72 nm-thick Cu/Cu 2 O composite film.…”

Section: Resultsmentioning

confidence: 99%

“…In literature, the study of Cu film has been generally centered on the optimization of film properties under various deposition techniques [1][2][3] for specific applications such as interconnection of ultra-large-scale integrated circuits (ULSIC). However, it should be noted that the surface of Cu film, especially that of nanoscale size, is susceptible to oxygen and gets oxidized spontaneously not only when exposing to air but also during film growing.…”

Section: Introductionmentioning

confidence: 99%

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Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Zhang

Yang

et al. 2016

Sci. China Mater.

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tered Cu atoms. It thus can be imaged that the sufficient oxygen source would lead to a partial or even full oxidation of the growing Cu film. Obviously, such undesirable oxidation would influence the performance, stability and lifetime of Cu film used as interconnection in ULSIC. Moreover, the parameter-dependent oxidation of Cu during physical sputtering deposition has not been investigated systemically yet. Thus, study on the parameter-dependent oxidation of physically sputtered Cu is crucial not only to mechanism understanding but also to practical avoidance of the undesirable oxidation.On the other hand, one recent interest in material research is the fabrication of high mobility semiconductors such as graphene-like MoS 2 [5] for the application in optoelectronic devices. Among Cu-based family, Cu is a typical metal material with a low resistivity of 1.67×10 −6 Ω cm, while its oxide Cu 2 O is a representative p-type semiconductor material with a band gap of 2.17 eV and a high resistivity of 3×10 6 Ω cm. Switzer et al. [6] found that the resistivity of layered Cu/Cu 2 O film could be tuned from 3.0×10 6 to 8.1×10−5 Ω cm. In spite of this, the optical property of the layered Cu/Cu 2 O film with a metallic resistivity was not studied in Ref. [6]. Thus, it is imperative to fabricate a certain structure of Cu-based films which can exhibit both metal and semiconductor characteristics.With the above considerations, we particularly studied the parameter-dependent oxidation of physically sputtered Cu and fabricated Cu-based semiconductor films with metallic resistivity. It was found that various Cu-based (oxide) films such as pure Cu, Cu 2 O, CuO films and Cu/ Cu 2 O, Cu 2 O/CuO composite films could be obtained by simply adjusting the deposition parameters during physical sputtering deposition. The main oxygen source for the oxidation of Cu and the parameter-dependent oxidation mechanisms were explored. Further, the electrical and op-ABSTRACT In this paper, we report the parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity. It was found that various Cu-based (oxide) films such as pure Cu, Cu2O, CuO films and Cu/Cu2O, Cu2O/CuO composite films could be obtained by simply adjusting the deposition parameters during physical sputtering deposition. The main oxygen source for the oxidation of Cu and the parameter-dependent oxidation mechanisms were explored. Further, the electrical and optical testing results show that the obtained pure Cu film and Cu/Cu2O composite film both present an intriguing combination of metal and semiconductor characteristics.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Zhang

Yang

et al. 2016

Sci. China Mater.

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“…13,14 An ionized deposition flux can also be employed to influence the angular distribution of the deposited material, since the trajectories of charged species can be manipulated by the use of electric and/or magnetic fields. [15][16][17][18] A technique that can be used to generate highly ionized deposition fluxes is high power impulse magnetron sputtering (HiPIMS). [19][20][21][22][23] Previously, HiPIMS has been employed for the deposition of Ta films on substrates placed at an angle of 90 with respect to the sputtering target normal, yielding films with columns positioned along the substrate surface normal.…”

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confidence: 99%

Tilt of the columnar microstructure in off-normally deposited thin films using highly ionized vapor fluxes

Elofsson

Magnfält

Samuelsson

et al. 2013

Journal of Applied Physics

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The tilt of the columnar microstructure has been studied for Cu and Cr thin films grown offnormally using highly ionized vapor fluxes, generated by the deposition technique high power impulse magnetron sputtering. It is found that the relatively large column tilt (with respect to the substrate normal) observed for Cu films decreases as the ionization degree of the deposition flux increases. On the contrary, Cr columns are found to grow relatively close to the substrate normal and the column tilt is independent from the ionization degree of the vapor flux when films are deposited at room temperature. The Cr column tilt is only found to be influenced by the ionized fluxes when films are grown at elevated temperatures, suggesting that film morphology during the film nucleation stage is also important in affecting column tilt. A phenomenological model that accounts for the effect of atomic shadowing at different nucleation conditions is suggested to explain the results. V C 2013 AIP Publishing LLC. [http://dx

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“…This strategy has been extensively employed over the last decades to control film growth when deposition is preformed normal to the substrate surface [4][5][6][7]. Research has also demonstrated the ability of using ionized vapor fluxes to control film microstructure and morphology when deposition is carried out at grazing incidence (off-normal growth) [8][9][10]. However, the fundamental physical processes that determine the growth evolution when performing off-normal deposition using ionized fluxes are not fully understood.…”

Section: Chapter 1 Introductionmentioning

confidence: 99%

Thin Film Growth using Pulsed and Highly Ionized Vapor Fluxes

Elofsson¹

2014

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Microstructure and morphology of thin films are decisive for many of their resulting properties. To be able to tailor these properties, and thus the film functionality, a fundamental understanding of thin film growth needs to be acquired. Film growth is commonly performed using continuous vapor fluxes with low energy, but additional handles to control growth can be obtained by instead using pulsed and energetic ion fluxes. In this licentiate thesis the physical processes that determine microstructure and morphology of thin films grown using pulsed and highly ionized vapor fluxes are investigated.The underlying physics that determines the initial film growth stages (i.e., island nucleation, island growth and island coalescence) and how they can be manipulated individually when using pulsed vapor fluxes have previously been investigated. Their combined effect on film growth is, however, paramount to tailor film properties. In the thesis, a route to generate pulsed vapor fluxes using the vapor-based technique high power impulse magnetron sputtering (HiPIMS) is established. These fluxes are then used to grow Ag films on SiO 2 substrates. For fluxes with constant energy and deposition rate per pulse it is demonstrated that the growth evolution is solely determined by the characteristics of the vapor flux, as set by the pulsing frequency, and the average time required for coalescence to be completed.Highly ionized vapor fluxes have previously been used to manipulate film growth when deposition is performed both normal and off-normal to the substrate. For the latter case, the physical mechanisms that determine film microstructure and morphology are, however, not fully understood. Here it is iii iv shown that the tilted columnar microstructure obtained during off-normal film growth is positioned closer to the substrate normal as the ionization degree of the flux increases, but only if certain nucleation characteristics are present.

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Copper deposition by electron cyclotron resonance plasma

Cited by 85 publications

References 0 publications

Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Parameter-dependent oxidation of physically sputtered Cu and the related fabrication of Cu-based semiconductor films with metallic resistivity

Tilt of the columnar microstructure in off-normally deposited thin films using highly ionized vapor fluxes

Thin Film Growth using Pulsed and Highly Ionized Vapor Fluxes

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