2021
DOI: 10.1007/s10854-020-05144-2
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Copper doping effect on the properties in ZnO films deposited by sol–gel

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Cited by 9 publications
(6 citation statements)
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“…The opposite could be observed in Cu doping, where the grain size increased to 51.95 nm. This result is also in agreement with a study by Istrate et al, who found that the addition of Cu increased the grain size of ZnO thin film [26].…”
Section: Bcossupporting
confidence: 93%
See 1 more Smart Citation
“…The opposite could be observed in Cu doping, where the grain size increased to 51.95 nm. This result is also in agreement with a study by Istrate et al, who found that the addition of Cu increased the grain size of ZnO thin film [26].…”
Section: Bcossupporting
confidence: 93%
“…In contrast, Al with an ionic radius of 0.053 nm is expected to cause a significant alteration in the lattice parameter, owing to the large radius difference. A previous study of Al-and/or Cu-doped ZnO thin film has been conducted [11][12][13][14][18][19][21][22][23][24][25][26][27][28]. However, the investigation focuses on the effect of only one doping (Al or Cu) in the ZnO thin film.…”
Section: ■ Introductionmentioning
confidence: 99%
“…This may be due to the displacement of copper atoms by zinc in the hexagonal lattice, the separation of copper into the non-crystalline region at the grain boundaries. Average crystallite size increased with the increasing of Cu concentration in the host ZnO, and it could be attributed to heterogeneous crystal growth at low supersaturation and crystals could grow faster than they nucleate, which result in a larger crystal size distribution (Istrate et al, 2021). c/a value of 1.48 was smaller than ideal c/a value of 1.63 due to the substitution of Cu into ZnO which indicated the electronegativity difference between Zn and Cu (Labhane et al, 2015).…”
Section: Structural Propertiesmentioning
confidence: 98%
“…When pure semiconductor capabilities are insufficient to meet the demands of the desired applications, one of the most effective approaches to improve semiconductor performance is doping with appropriate elements. ZnO has been doped with aluminium [ 8 ], gallium [ 9 , 10 ], cadmium [ 11 ], copper [ 12 ], and other materials to optimise its optical, electrical, and physical properties. In the literature, Indeed, various publications have proposed chemoresistive sensors based on WO 3 [ 13 ], SnO 2 [ 14 ], Co 3 O 4 [ 15 ], and ZnO [ 16 ] that have been investigated for the detection of VOCs.…”
Section: Introductionmentioning
confidence: 99%