Copper oxide thin films grown by plasma evaporation method

Room-Temperature High-Performance H2S Sensor Based on Porous CuO Nanosheets Prepared by Hydrothermal Method

“…The porous structure is obviously different from the literature for those leaves-like or sheet structures of CuO. [25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] The surface area of these CuO nanosheets obtained based on the BET method is 10.03 m 2 ·g -1 . These porous CuO nanosheets are efficient for the gas flowing in and out, thus enhancing their gas sensing performance.…”

“…40 It has been reported that the specific sites of molecular adsorption were remarkably influenced by the band gap energy, and thus could remarkably influence the gas sensitive property. 37,38 3.2 Sensing performance using CuO thin films, the detection limit to H 2 S was higher than 100 ppb. 12 Therefore, we can confirm that at room temperature, our sensor based on the porous CuO nanosheets in this study has an excellent property for detecting hydrogen sulfide at lower concentrations.…”

“…37 The larger E g values of various CuO nanostructures have been reported, such as 3.48 eV for ultra-long CuO nanowires, 38 3.55 eV for CuO nanoplates, 39 and 3.02 eV for CuO nanoplatelets. 40 It has been reported that the specific sites of molecular adsorption were remarkably influenced by the band gap energy, and thus could remarkably influence the gas sensitive property.…”

Optical and magnetic properties of CuO nanowires grown by thermal oxidation

“…[1,2] and monoclinic structure. Larger band gaps between 1.6 eV and about 2.1 eV have also been reported [3][4][5]. This oxide has useful catalytic properties, e.g ref.…”

Electrodeposited Cu2O Thin Films for Fabrication of CuO/Cu2O Heterojunction

“…Therefore it was focused to prepare Cu 2 O at low temperature, which may provide better characteristics in this regard. Among the various Cu 2 O deposition techniques (Olsen et al, 1981;Aveline & Bonilla, 1981;Fortin & Masson, 1981;Roos et al, 1983;Sears & Fortin, 1984;Rakhshani, 1986;Rai, 1988;Santra et al, 1992;Musa et al, 1998;Maruyama, 1998;Ivill et al, 2003;Hames & San, 2004;Ogwa et al, 2005), electrodeposition (Siripala & Jayakody, 1986, Siripala et al, 1996Rakhshani & Varghese, 1987a, 1988bMahalingam et al, 2004;Tang et al, 2005;Wijesundera et al, 2006) is an attractive one because of its simplicity, low cost and low-temperature process and on the other hand the composition of the material can be easily adjusted leading to changes in physical properties. Most of the techniques produce p-type conducting thin films.…”